MRF9030L MRF9030
TO-272
Freescale
06+
RF Power Field Effect TransistorN - Channel Enhancement - Mode Lateral MOSFET 945 MHz, 30 W, 26 V ni-360
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国家代码TO-272
Freescale
06+
RF Power Field Effect TransistorN - Channel Enhancement - Mode Lateral MOSFET 945 MHz, 30 W, 26 V ni-360
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H2S
Mitsubishi
2017+
Silicon RF Devices RF High Power MOS FET Modules RA55H3340M Remarks RoHS : Restriction of the use of certain Hazardous Substances in Electrical and Electronic Equipment
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H46S
Mitsubishi
2015+
Silicon RF Devices RF High Power MOS FET Modules RA07H4452M Remarks RoHS : Restriction of the use of certain Hazardous Substances in Electrical and Electronic Equipment
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H2M
Mitsubishi
2018+
Silicon RF Devices RF High Power MOS FET Modules RA30H3847M1 Remarks RoHS : Restriction of the use of certain Hazardous Substances in Electrical and Electronic Equipment
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H2S
Mitsubishi
2017+
Silicon RF Devices RF High Power MOS FET Modules RA30H4452M Remarks RoHS : Restriction of the use of certain Hazardous Substances in Electrical and Electronic Equipment
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H46S
Mitsubishi
2013
Silicon RF Devices RF High Power MOS FET Modules RA07M1317M Remarks RoHS : Restriction of the use of certain Hazardous Substances in Electrical and Electronic Equipment
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H2M
Mitsubishi
2018+
Silicon RF Devices RF High Power MOS FET Modules RA30H3340M Remarks RoHS : Restriction of the use of certain Hazardous Substances in Electrical and Electronic Equipment
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H2M
Mitsubishi
2017+
Silicon RF Devices RF High Power MOS FET Modules RA60H3847M1 Remarks RoHS : Restriction of the use of certain Hazardous Substances in Electrical and Electronic Equipment
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H2M
Mitsubishi
2018+
Silicon RF Devices RF High Power MOS FET Modules RA30H2127M1 Remarks RoHS : Restriction of the use of certain Hazardous Substances in Electrical and Electronic Equipment
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H2S
Mitsubishi
2018+
Silicon RF Devices RF High Power MOS FET Modules RA13H4047M Remarks RoHS : Restriction of the use of certain Hazardous Substances in Electrical and Electronic Equipment
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SMD
Philips
00+
Triple video driver hybrid amplifie
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H46S
Mitsubishi
2018+
Silicon RF Devices RF High Power MOS FET Modules RA07H4047M Remarks RoHS : Restriction of the use of certain Hazardous Substances in Electrical and Electronic Equipment
RA07H4047M is a power transistor manufactured by Mitsubishi. It is a NPN type transistor with a maximum collector current of 7A and a maximum collector-emitter voltage of 400V. It is used in power amp
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H2M
Mitsubishi
2017+
Silicon RF Devices RF High Power MOS FET Modules RA30H4452M1 Remarks RoHS : Restriction of the use of certain Hazardous Substances in Electrical and Electronic Equipment
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