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产品描述
BSH103
N-channel Enhancement Mode MOS Transistor
Package: SOT23 (SST3)
本网站上使用的所有产品名称,商标,品牌和徽标均为其各自所有者的财产。 具有这些名称,商标,品牌和徽标的产品的描述或销售仅用于标识目的,并不表示与任何权利所有者有任何隶属关系或授权。
来自同一制造商的某些零件号
Some Part number from the same manufacture Philips Semiconductors (Acquired by NXP) |
BSH104 BSH104; N-channel Enhancement Mode MOS Transistor |
BSH105 BSH105; N-channel Enhancement Mode MOS Transistor;; Package: SOT23 (SST3) |
BSH106 BSH106; N-channel Enhancement Mode MOS Transistor |
BSH107 BSH107; N-channel Enhancement Mode MOS Transistor |
BSH108 BSH108; N-channel Enhancement Mode Field-effect Transistor;; Package: SOT23 (SST3) |
BSH111 BSH111; N-channel Enhancement Mode Field-effect Transistor;; Package: SOT23 (SST3) |
BSH112 BSH112; N-channel Enhancement Mode Field-effect Transistor;; Package: SOT23 (SST3) |
BSH114 BSH114; N-channel Enhancement Mode Field Effect Transistor;; Package: SOT23 (SST3) |
BSH120T BSH120T; N-channel Enhancement Mode Field-effect Transistor |
BSH121 BSH121; N-channel Enhancement Mode Field-effect Transistor;; Package: SOT23 (SST3) |
BSH201 BSH201; P-channel Enhancement Mode MOS Transistor;; Package: SOT23 (SST3) |
BSH202 BSH202; P-channel Enhancement Mode MOS Transistor;; Package: SOT23 (SST3) |
BSH203 BSH203; P-channel Enhancement Mode MOS Transistor;; Package: SOT23 (SST3) |
BSH205 BSH205; P-channel Enhancement Mode MOS Transistor;; Package: SOT23 (SST3) |
BSH206 BSH206; P-channel Enhancement Mode MOS Transistor |
BSH207 BSH207; P-channel Enhancement Mode MOS Transistor;; Package: SOT457 (TSOP6, SMT6, SSOT6) |
BSH299 BSH299; P-channel Enhancement Mode MOS Transistor |
BSH301 Dual N-channel Enhancement Mode MOS Transistor |
BSN10 BSN10; BSN10A; N-channel Enhancement Mode Vertical D-mos Transistors |
BSN20 BSN20; N-channel Enhancement Mode Field-effect Transistor;; Package: SOT23 (SST3) |
BSN205 BSN205; BSN205A; N-channel Enhancement Mode Vertical D-mos Transistor |
HEF4526BU : CMOS/BiCMOS->4000 Family HEF4526B MSI; Programmable 4-bit Binary Down Counter NE568AN : NE568A;SA568A; 150MHz Phase-locked Loop PCA167XSERIES : 32 KHZ Watch Circuits Using a Silver-oxide or a 3v Lithium Battery PSMN070-200B : PRLL5817; PRLL5818; PRLL5819; Schottky Barrier Diodes;; Package: SOD87 (LLDL) TDA8874PS : TDA9141/N2 : NTSC TDA9141; Pal/ntsc/secam Decoder/sync Processor UAA2077TS : UAA2077TS; 2 GHZ Image Rejecting Front-end PSMN2R8-25MLC : N-channel 25 V 2.8 MΩ Logic Level MOSFET In LFPAK33 Using NextPower Technology Logic level enhancement mode N-channel MOSFET in LFPAK33 package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. |
同品类
Same catergory |
6A05-B : 6.0A,50V,STD,R-6. Low cost Low leakage Low forward voltage drop High current capability High surge current capability Case: Molded plastic Epoxy: Device has UL flammability classification 94V-O Lead: MIL-STD-202E method 208C guaranteed Mounting position: Any Weight: 2.08 grams Ratings o C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive. LS831 : Dual. Ultra Low Leakage Low Drift Monolithic Dual N-channel JFET. ULTRA LOW DRIFT ULTRA LOW LEAKAGE LOW NOISE LOW CAPACITANCE |VGS1-2 /T|= 5µV/°C max. = 80fA TYP. en= 70nV/Hz TYP. CISS= 3pf MAX. ULTRA LOW LEAKAGE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET ABSOLUTE MAXIMUM RATINGS NOTE @ 25°C (unless otherwise noted) Maximum Temperatures Storage Temperature Operating Junction Temperature +150°C D1 Maximum Voltage and Current. MB4005 : Package Type : MB-50, if : 40A, VRM : 50V. Mounting Hole For #8 Screw Plastic Case With Metal Bottom Any Mounting Position Surge Rating Of 400 Amps Operating Temperature: to +150°C Storage Temperature: to +150°C Device Marking Maximum Reccurrent Peak Reverse Voltage 800V 1000v Maximum RMS Voltage 560V 700V Maximum DC Blocking Voltage 800V 1000v Average Forward Current Peak Forward Surge Current. PTB20011 : Power. 20 Watts P-sync, 470-860 MHZ UHF TV Linear Power Transistor. The is an NPN common emitter UHF power transistor intended for 26.5 Vdc class A operation from to 860 MHz. It is rated at 20 watts (p-sync) output power, and may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization ensure excellent device reliability. 100% lot traceability is standard. 20 Watts. STTA2512 : 1200V Turboswitch Diodes. Turboswitch - Ultra-fast High Voltage Diode. BUL742C : Transistors, Power Bipolar High voltage fast-switching NPN power transistor. ZXMS6005DT8 : MOSFETs IntelliFET ZXMS6005DT8 The ZXMS6005DT8 is a dual self protected low side MOSFET with logic level input. It integrates over-temperature, overcurrent, over-voltage (active clamp) and ESD protected logic level functionality independently per channel. The ZXMS6005DT8 is ideal as a general purpose switch driven from 3.3V or 5V microcontrollers in harsh. 03028-BR473YKM-B : CAPACITOR, CERAMIC, MULTILAYER, 16 V, BR, 0.047 uF, SURFACE MOUNT, 0603. s: Configuration / Form Factor: Chip Capacitor ; Technology: Multilayer ; Applications: General Purpose ; Electrostatic Capacitors: Ceramic Composition ; RoHS Compliant: Yes ; Capacitance Range: 0.0470 microF ; Capacitance Tolerance: 10 (+/- %) ; WVDC: 16 volts ; Mounting Style:. A05130F0.07 : RES NET,THICK FILM,13 OHMS,200WV,1% +/-TOL,-100,100PPM TC,3412 CASE. s: Configuration: Chip Array ; Category / Application: General Use. ARPS10530JROK : CAPACITOR, METALLIZED FILM, POLYPROPYLENE, 300 V, 1 uF, THROUGH HOLE MOUNT. s: Technology: Film Capacitors ; Applications: General Purpose ; Electrostatic Capacitors: Polypropylene ; RoHS Compliant: Yes ; Capacitance Range: 1 microF ; Capacitance Tolerance: 5 (+/- %) ; WVDC: 300 volts ; Mounting Style: Through Hole ; Operating Temperature: -40 to 85 C (-40. J108-TO-92 : N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-92. s: Polarity: N-Channel ; rDS(on): 18 ohms ; Package Type: TO-92, TO-92, 3 PIN ; Number of units in IC: 1. MP1500-LF : 15 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE. s: Diode Type: BRIDGE RECTIFIER DIODE ; Diode Applications: Rectifier ; IF: 300000 mA ; VBR: 50 volts ; RoHS Compliant: RoHS ; Package: ROHS COMPLIANT, PLASTIC, MP-15, 4 PIN ; Pin Count: 4 ; Number of Diodes: 4. NDS9945D84Z : 3.5 A, 60 V, 0.1 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET. s: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 60 volts ; rDS(on): 0.1000 ohms ; PD: 2000 milliwatts ; Package Type: SOIC-8 ; Number of units in IC: 2. QS8J4TR : 4 A, 30 V, 0.056 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET. s: Polarity: P-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 30 volts ; rDS(on): 0.0560 ohms ; Package Type: TSMT8, 8 PIN ; Number of units in IC: 2. SOMC140112K0JEJ : RESISTOR, NETWORK, FILM, BUSSED, 1.05 W, SURFACE MOUNT. s: Configuration: Chip Array ; Category / Application: General Use ; Technology / Construction: Thick Film (Chip) ; Mounting / Packaging: Surface Mount Technology (SMT / SMD), DIP, ROHS COMPLIANT ; Tolerance: 5 +/- % ; Temperature Coefficient: 100 ±ppm/°C ; Power Rating: 1.05 watts (0.0014 HP) ; Operating. 10ME56SWG : CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 10 V, 56 uF, THROUGH HOLE MOUNT. s: : Polarized ; Capacitance Range: 56 microF ; Capacitance Tolerance: 20 (+/- %) ; WVDC: 10 volts ; Leakage Current: 16.8 microamps ; ESR: 170 milliohms ; Mounting Style: Through Hole ; Operating Temperature: -40 to 105 C (-40 to 221 F). 51074R : TELECOM TRANSFORMER. s: Category: Signal ; Other Transformer Types / Applications: Telecom ; Mounting: Chip Transformer ; Operating Temperature: -40 to 85 C (-40 to 185 F). 684THB275KG : CAPACITOR, METALLIZED FILM, POLYPROPYLENE, 0.68 uF, THROUGH HOLE MOUNT. s: Configuration / Form Factor: Leaded Capacitor ; Technology: Film Capacitors ; Applications: General Purpose ; Electrostatic Capacitors: Polypropylene ; Capacitance Range: 0.6800 microF ; Capacitance Tolerance: 10 (+/- %) ; Mounting Style: Through Hole ; Operating Temperature:. |
有1088个来至China的买家评价
Thomas White
Length of registration:7 years
The BSH103 integrated circuit is a high-performance device designed for use in a variety of applications. It offers excellent performance in terms of power consumption, speed, and reliability. With its low power consumption and high speed, it is an ideal choice for applications requiring high performance. Additionally, it is highly reliable and has a long life expectancy, making it a great choice
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03/17/2023
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BSH103
BSH103 has several brands around the world that may have alternate names for BSH103 due to regional differences or acquisition. BSH103 may also be known as the following names:
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