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Country CodeTOSHIBA
Your search GT60M303 and relate product result :14 items
Description: GT60M303 is a PNP transistor manufactured by Toshiba. Features: - Collector-Emitter Voltage (Vce): -90 V - Collector-Base Voltage (Vcb): -90 V - Emitter-Base Voltage (Veb): -5 V - Colle
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Description: GT60M303 is a three-terminal, NPN, silicon power transistor manufactured by Toshiba. Features: High breakdown voltage High collector-emitter saturation voltage Low collector-emitter
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Description: GT60M303 is a three-terminal silicon power transistor in a TO-3PL package. Features: Low collector-emitter saturation voltage High current gain Low collector-emitter leakage cur
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Description: GT60M303 is a three-terminal silicon power transistor in a TO-3PL package. Features: Low collector-emitter saturation voltage High current gain Low collector-emitter leakage cur
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Description: The GT60M303N is a three-terminal, NPN, high-voltage, high-speed switching transistor. It is designed for use in high-voltage, high-speed switching applications such as switching regulato
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