≥1:
US $3.66713
Buy(0)
Inquiry(0)
Dear customers, due to the implementation of the GDPR policy in Europe, UTSOURCE has also made adjustment accordingly to meet the policy requirements. Please read the new privacy policy carefully and this window will no longer pop up after you accept it.
Delivery Address
+ Add Address
The new shipping address
* Please fill in the cell phone number correctly to make sure that you can receive the tracking info in time.
Country CodeIXYS
INFINEON
FAIRCHILD
ON SEMICONDUCTOR
Your search 10N60A and relate product result :41 items
Stock:10000
Minimum:5
Favorite
Description: N-Channel Enhancement Mode MOSFET Features: - Low On-Resistance - Low Gate Charge - Low Input Capacitance - Avalanche Ruggedness - High Speed Switching - Fully Characterized Capacitance a
Stock:10000
Minimum:2
Favorite
TO-247
IXYS
00+
Low VCE(sat) IGBT with Diode, High speed IGBT with Diode Combi Packs
Description: IXGH10N60AU1 is a 600V, 10A, N-channel IGBT from IXYS. Features: Low on-state voltage Low gate charge Low switching losses High current capability High speed switching High surge ca
Stock:10000
Minimum:2
Favorite
TO-220
Infineon Technologies AG
03+
Fast Igbt And Antiparallel Fast Recovery Diode in Only One Package
Description: The SKP10N60A is a N-channel MOSFET transistor manufactured by Infineon Technologies. It is designed for use in high-speed switching applications. Features: 600V drain-source breakdown
Stock:10000
Minimum:2
Favorite
Description: SSS10N60A is a N-channel MOSFET transistor manufactured by Fairchild Semiconductor. It is housed in a TO-220 package. Features: Low on-resistance Low gate charge High current capabili
Stock:10000
Minimum:3
Favorite
TO-263
Infineon Technologies AG
06+
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
Description: The SKB10N60A is a N-channel MOSFET from Infineon Technologies. Features: Low on-state resistance Low gate charge Fast switching High avalanche energy capability High dV/dt capabili
Stock:10000
Minimum:2
Favorite
Description: N-Channel MOSFET Transistor Features: - High-speed switching - Low on-resistance - Low gate charge - Low input capacitance - Avalanche energy rated Applications: - DC-DC converters - Mot
Stock:10000
Minimum:2
Favorite
Stock:20
Minimum:5
Favorite
Stock:10000
Minimum:2
Favorite
Description: N-Channel Enhancement Mode Power MOSFET Features: - Low Gate Charge - Low On-Resistance - Avalanche Rated - High Current Capability - High Speed Switching - RoHS Compliant Applications: -
Stock:10000
Minimum:2
Favorite
Stock:10000
Minimum:2
Favorite
Description: IXGH10N60A is an N-Channel IGBT module from IXYS. It has a maximum collector-emitter voltage of 600V, a maximum collector current of 10A, and a maximum gate-emitter voltage of 20V. Featu
Stock:10000
Minimum:2
Favorite
Description: IXGH10N60AUI is an N-channel MOSFET from IXYS. It is housed in a TO-247 package and has a maximum drain-source voltage of 600V. Features: Low gate charge Low on-state resistance
Stock:10000
Minimum:2
Favorite
Description: N-Channel MOSFET Features: Low On-Resistance Fast Switching Low Gate Charge Low Input Capacitance Avalanche Energy Rated RoHS Compliant Applications: DC/DC Converters
Stock:10000
Minimum:2
Favorite
Stock:22
Minimum:2
Favorite
Stock:104
Minimum:2
Favorite
Stock:50
Minimum:6
Favorite
Stock:7115
Minimum:5
Favorite
Stock:3800
Minimum:5
Favorite
Stock:4000
Minimum:5
Favorite
Stop production experts, we can provide a large number of electronic components that have been stopped production and are difficult to find, to facilitate the maintenance company