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Country CodeTOSHIBA
Your search 2SA1302 and relate product result :10 items
TO-3PL
Various Russian Datasheets
IC(A) = 15, VCBO(V) = 200, VCEO(V) = 200, PD(W) = 150, Package = TO-3P, HFE(Min/Max) = 55/160, IC/VCE(A/V) = 1.0/5.0, VCE(SAT)(V) = 3.0, ic / IB(A/mA) = 10/1A
2SA1302 is a PNP silicon epitaxial transistor manufactured by various Russian companies. It is a three-terminal device with a TO-3PL package. Description: 2SA1302 is a PNP silicon epitaxial transisto
Stock:10000
Minimum:2
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Stock:8
Minimum:2
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Stock:1767
Minimum:2
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TO-3PL
15+
IC(A) = 15, VCBO(V) = 200, VCEO(V) = 200, PD(W) = 150, Package = TO-3P, HFE(Min/Max) = 55/160, IC/VCE(A/V) = 1.0/5.0, VCE(SAT)(V) = 3.0, ic / IB(A/mA) = 10/1A
2SA1302 and 2SC3281 are PNP and NPN silicon epitaxial transistors, respectively, in a TO-3PL package. Description: 2SA1302: This is a PNP silicon epitaxial transistor designed for use in power ampli
Stock:10000
Minimum:10
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2SA1302 and 2SC3281 are PNP and NPN silicon epitaxial transistors, respectively, in a TO-3PL package. Description: 2SA1302: This is a PNP silicon epitaxial transistor designed for use in power ampli
Stock:10000
Minimum:2
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2SA1302-O is a PNP transistor manufactured by Toshiba. It is a TO-3PL package and is used for general purpose switching and amplifier applications. It has a maximum collector current of -2A, a maximum
Stock:10000
Minimum:2
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Stock:10000
Minimum:2
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TO-3PL
15+
IC(A) = 15, VCBO(V) = 200, VCEO(V) = 200, PD(W) = 150, Package = TO-3P, HFE(Min/Max) = 55/160, IC/VCE(A/V) = 1.0/5.0, VCE(SAT)(V) = 3.0, ic / IB(A/mA) = 10/1A
Stock:10000
Minimum:2
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TO-3P
To-3pl
15+
IC(A) = 15, VCBO(V) = 200, VCEO(V) = 200, PD(W) = 150, Package = TO-3P, HFE(Min/Max) = 55/160, IC/VCE(A/V) = 1.0/5.0, VCE(SAT)(V) = 3.0, ic / IB(A/mA) = 10/1A
Stock:10000
Minimum:2
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Stop production experts, we can provide a large number of electronic components that have been stopped production and are difficult to find, to facilitate the maintenance company