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Country CodeMITSUBISHI
SANYO
Your search 2SC4154 and relate product result :17 items
SOT-323
Mitsubis
n/a
FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE
Description: The 2SC4154 is a NPN silicon epitaxial transistor manufactured by Mitsubishi. Features: Low collector-emitter saturation voltage High current gain High breakdown voltage Low noise A
Stock:10000
Minimum:3
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SOT-323/SC-70
Mitsubishi
05+
2SC4154 NPN Transistors(BJT) 50V 200mA/0.2A 200MHz 250~500 300mV/0.3V SOT-323/SC-70 marking LF low-frequency amplifier
Stock:46190
Minimum:23
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SOT-323/SC-70
Mitsubishi
06NOPB
2sc4154 NPN Transistors(BJT) 50V 200mA/0.2A 200MHz 150~300 300mV/0.3V SOT-323/SC-70 marking LE low-frequency amplifier
Stock:11450
Minimum:23
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Stock:18000
Minimum:228
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Stock:6000
Minimum:228
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Stock:4750
Minimum:10
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SOT323
Mitsubishi
FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE
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2SC4154E is a NPN silicon transistor manufactured by Toshiba. It is designed for use in switching and amplifier applications. Features: Low Collector-Emitter Saturation Voltage High DC Curren
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Description: NPN Silicon Transistor Features: Low collector-emitter saturation voltage High current gain High switching speed Low collector-emitter leakage current Applications: Audio
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Description: NPN Transistor Features: Low collector-emitter saturation voltage High current gain Low noise High breakdown voltage High reliability Application: Audio amplifier Swit
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SOT23
ROHM Semiconductor
00+
FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE
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Stop production experts, we can provide a large number of electronic components that have been stopped production and are difficult to find, to facilitate the maintenance company