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Your search 30G124 and relate product result :6 items
Description: NPN Silicon Power Transistor Features: High DC Current Gain Low Collector-Emitter Saturation Voltage High Collector-Emitter Voltage Low Collector-Base Capacitance High Frequenc
Stock:10000
Minimum:2
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Stock:5000
Minimum:10
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Description: 30A, 1200V, NPT IGBT Features: Low VCE(sat) Low switching losses High speed switching Low gate charge Low thermal resistance High short circuit capability High current cap
Stock:10000
Minimum:4
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Description: GT30G124 is a three-terminal, high-voltage, high-speed, ultra-fast recovery rectifier diode. Features: -High-voltage: Vrrm = 1200V -High-speed: trr = 10ns -Ultra-fast recovery: Qrr = 25n
Stock:10000
Minimum:2
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Description: 30A, 1200V, NPT IGBT Features: Low VCE(sat) Low switching losses High speed switching Low gate charge Low thermal resistance High short circuit capability High current cap
Stock:21253
Minimum:4
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Stop production experts, we can provide a large number of electronic components that have been stopped production and are difficult to find, to facilitate the maintenance company