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Country CodeIXYS
FAIRCHILD
HARRIS SEMICONDUCTOR
Your search 30N60B3D and relate product result :18 items
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TO-247
IXYS
Trans IGBT Chip N-CH 600V 60A 270000mW Automotive 3-Pin(3+Tab) TO-247AD
Description: IXXH30N60B3D1 is a N-Channel MOSFET from IXYS Corporation. Features: Low on-resistance Low gate charge Low input capacitance Fast switching Avalanche rated RoHS complian
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Stock:10000
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TO-3P
FAI
03+
60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode60A, 600V, UFS N
Description: N-Channel IGBT Transistor Features: - 600V Vceo - 30A Ic - Low Saturation Voltage - High Input Impedance - Low Gate Charge - Low Crossover Loss - High Speed Switching Applications: - Moto
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TO-3P
HAR
2002
60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
Description: This is an N-channel insulated gate bipolar transistor (IGBT) with a TO-3P package. Features: Low VCE(sat) Low gate charge High current capability High input impedance High speed swi
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Description: This is a N-channel MOSFET transistor manufactured by Infineon Technologies. It has a maximum drain source voltage of 600V, a maximum drain current of 30A, and a maximum gate threshold vo
Stock:1549
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Stop production experts, we can provide a large number of electronic components that have been stopped production and are difficult to find, to facilitate the maintenance company