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Country CodeON SEMICONDUCTOR
STMICROELECTRONICS
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Your search MJD122 and relate product result :37 items
Description: The MJD122 is a NPN silicon epitaxial planar Darlington transistor designed for general purpose switching and amplifier applications. Features: - High DC current gain - Low collector-emi
Stock:10000
Minimum:18
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Stock:532
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The MJD122 is a NPN Bipolar Transistor in a TO-252 (DPAK) package. It is designed for use in applications such as switching and amplifier circuits. Features: Low collector-emitter saturation volta
Stock:10000
Minimum:17
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Stock:60
Minimum:7
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Stock:203
Minimum:7
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Description: NPN Bipolar Transistor Features: Low Collector-Emitter Saturation Voltage High DC Current Gain Low Noise High Collector-Emitter Voltage Low Collector-Base Voltage High Switching Spe
Stock:282
Minimum:3
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Stock:45210
Minimum:5
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Stock:11689
Minimum:4
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Description: The MJD122T4 is a PNP Darlington Transistor manufactured by STMicroelectronics. It has a maximum collector current of 1.5A and a maximum collector-emitter voltage of 60V. Features: High
Stock:2143
Minimum:5
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MJD122G is a NPN epitaxial silicon transistor in a TO-252 (DPAK) plastic package. It is designed for use in general-purpose amplifier and switching applications. Features: * Low collector-emitter sat
Stock:10000
Minimum:7
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Stock:980
Minimum:3
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Stock:347
Minimum:12
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Stock:2172
Minimum:15
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Stock:37500
Minimum:100
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Stock:24
Minimum:12
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Stock:300
Minimum:6
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Stock:9
Minimum:8
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Stock:10000
Minimum:3
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Description: The MJD122-1 is a NPN Darlington transistor in a TO-251 package. Features: Low saturation voltage High current gain High input impedance High frequency operation Applications: Moto
Stock:10000
Minimum:3
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Stop production experts, we can provide a large number of electronic components that have been stopped production and are difficult to find, to facilitate the maintenance company