≥1:
US $2.79400
Buy(0)
Inquiry(0)
Dear customers, due to the implementation of the GDPR policy in Europe, UTSOURCE has also made adjustment accordingly to meet the policy requirements. Please read the new privacy policy carefully and this window will no longer pop up after you accept it.
Delivery Address
+ Add Address
The new shipping address
* Please fill in the cell phone number correctly to make sure that you can receive the tracking info in time.
Country CodeFAIRCHILD
INTERSIL
HARRIS SEMICONDUCTOR
Your search 20N60A4 and relate product result :28 items
Description: N-Channel MOSFET Transistor Features: Low Gate Charge Low Input Capacitance Low On-Resistance Fast Switching Speed Avalanche Rated RoHS Compliant Applications: Switching Applicatio
Stock:10000
Minimum:2
Favorite
Description: The 20N60A4 is a N-channel MOSFET that is designed for high-speed switching applications. It has a maximum drain-source voltage of 600V and a maximum drain current of 20A. Features: Lo
Stock:10000
Minimum:2
Favorite
Stock:11
Minimum:1
Favorite
Description: The 20N60A4D is an N-channel enhancement mode power MOSFET developed using Fairchild Semiconductor's advanced PowerTrench process. Features: - Low on-resistance - Fast switching speed -
Stock:10000
Minimum:2
Favorite
Stock:2000
Minimum:1
Favorite
TO-247
Fairchil
600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode600V,SMPSN()
Description: HGTG20N60A4D is an N-channel, insulated gate bipolar transistor (IGBT) module with a maximum dissipation of 637W and a breakdown voltage of 600V. Features: - Maximum current: 20A - Maxim
Stock:10000
Minimum:2
Favorite
Description: N-Channel IGBT Features: Low on-state resistance Low gate charge High speed switching High surge current capability Low forward voltage drop High temperature operation Appli
Stock:10000
Minimum:2
Favorite
The 20N60A4D is an N-channel enhancement-mode Field Effect Transistor (FET) manufactured by Harris. It has a die size of 4.6mm x 7.9mm and a total gate charge of 30 nC max. Features: - Low On-Resist
Stock:10000
Minimum:2
Favorite
Description: HGTG20N60A4 is a 600V N-channel IGBT module manufactured by Fairchild Semiconductor. Features: Low saturation voltage Low gate charge High speed switching High current carrying capab
Stock:10000
Minimum:2
Favorite
Description: The G20N60A4D is a 600V, 20A, N-Channel MOSFET from Intersil. Features: Low Gate Charge Low On-Resistance Low Input Capacitance Low Output Capacitance Low Leakage Current High Speed
Stock:10000
Minimum:2
Favorite
Stock:146
Minimum:5
Favorite
Stock:535
Minimum:5
Favorite
Stock:21221
Minimum:2
Favorite
Stock:10000
Minimum:1
Favorite
Stock:10000
Minimum:2
Favorite
Stock:10000
Minimum:2
Favorite
Description: This is an N-Channel, 600V, 20A, TO-247 package, Field Stop Trench IGBT. Features: Low VCE(sat) Low gate charge High current capability High switching speed High input imp
Stock:10000
Minimum:1
Favorite
Stock:39
Minimum:1
Favorite
Stock:29
Minimum:1
Favorite
Stock:11
Minimum:4
Favorite
Stop production experts, we can provide a large number of electronic components that have been stopped production and are difficult to find, to facilitate the maintenance company