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Country CodeNEC
RENESAS
SAMSUNG
Your search 2SA812 and relate product result :128 items
SOT-23
NEC
n/a
AUDIO FREQUENCY,GENERAL PURPOSE AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD
Description: 2SA812 is a PNP transistor manufactured by NEC. Features: Low collector-emitter saturation voltage High current gain High breakdown voltage High reliability Low noise Applications
Stock:10000
Minimum:13
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SOT-23/SC-59
NEC
04+
2SA812 PNP transistors(BJT) -60V -100mA/-0.1A 180MHz 90~180 -300mV/-0.3V SOT-23/SC-59 marking M4 high DC current gain
Stock:19308
Minimum:28
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SOT-23/SC-59
NEC
05+ROHS
2SA812 PNP transistors(BJT) -60V -100mA/-0.1A 180MHz 135~270 -300mV/-0.3V SOT-23/SC-59 marking M5 high DC current gain
Stock:261300
Minimum:28
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SOT-23/SC-59
NEC
07+ROHS
2SA812 PNP transistors(BJT) -60V -100mA/-0.1A 180MHz 200~400 -300mV/-0.3V SOT-23/SC-59 marking M6 high DC current gain
Stock:120940
Minimum:28
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SOT-23/SC-59
NEC
08+ROHS
2SA812 PNP transistors(BJT) -60V -100mA/-0.1A 180MHz 300~600 -300mV/-0.3V SOT-23/SC-59 marking M7 high DC current gain
Stock:1700
Minimum:28
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Stock:2550
Minimum:50
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Stock:2549
Minimum:50
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Stock:29450
Minimum:50
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Stock:12750
Minimum:175
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Stock:29814
Minimum:182
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Stock:1124
Minimum:109
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Stock:3000
Minimum:114
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Stock:680
Minimum:57
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Stock:30000
Minimum:569
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Stock:2319
Minimum:91
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SOT-23/SC-59
LRC
03+
L2SA812SLT1G PNP transistors(BJT) -60V -150mA/-0.15A 180MHz 270~560 -300mV/-0.3V SOT-23/SC-59 marking M7 high voltage
Stock:1500
Minimum:28
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SOT-23
Made In China
05+
2SA812-M7 PNP transistors(BJT) -60V -100mA/-0.1A 180MHz 300~600 -300mV/-0.3V SOT-23 marking M7 high DC current gain
Stock:2500
Minimum:28
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SOT-23/SC-59
NEC
02+
2SA812H PNP transistors(BJT) -60V -100mA/-0.1A 180MHz 200~400 -300mV/-0.3V SOT-23/SC-59 marking M6 high DC current gain
Stock:1700
Minimum:28
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SOT-23/SC-59
LRC
03+
L2SA812RL PNP transistors(BJT) -60V -150mA/-0.15A 180MHz 180~390 -300mV/-0.3V SOT-23/SC-59 marking M6 high voltage
Stock:12000
Minimum:28
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Stock:1523
Minimum:114
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