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Country CodeTOSHIBA
Your search 2SC2873-Y(MY) and relate product result :19 items
SOT-89/PW-Mini
13+ROHS
TRANSISTOR 2000 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-5K1A, SC-62, 3 PIN, BIP General Purpose Small Signal
Stock:10000
Minimum:6
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SOT-89
Toshiba America Electronic Components
n/a
TRANSISTOR 2000 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-5K1A, SC-62, 3 PIN, BIP General Purpose Small Signal
Stock:10000
Minimum:12
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SOT-89/PW-Mini
Toshiba
13+ROHS
2SC2873-Y NPN Transistors(BJT) 50V 2A 120MHz 120~240 500mV/0.5V SOT-89/PW-Mini marking MY power amplifier voltage amplifier
Stock:144839
Minimum:5
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Stock:272
Minimum:38
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Stock:19
Minimum:8
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Stock:421
Minimum:16
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SOT89
2014+
TRANSISTOR 2000 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-5K1A, SC-62, 3 PIN, BIP General Purpose Small Signal
Description: The 2SC2873-Y(TE12L,C) is a NPN silicon epitaxial transistor manufactured by Toshiba. Features: * High DC current gain * High breakdown voltage * High switching speed Applications: * Au
Stock:10000
Minimum:16
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Description: NPN Epitaxial Planar Silicon Transistor Features: High DC Current Gain Low Collector-Emitter Saturation Voltage High Transition Frequency Complementary to 2SA1216-Y(MY) Appl
Stock:10000
Minimum:4
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Stock:10000
Minimum:13
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Stock:30000
Minimum:21
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SOT-89
1441
TRANSISTOR 2000 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-5K1A, SC-62, 3 PIN, BIP General Purpose Small Signal
Description: The 2SC2873-Y TE12L,ZC is a NPN silicon epitaxial transistor manufactured by Toshiba. Features: High breakdown voltage (VCEO= -120V) Low collector-emitter saturation voltage (VCE(
Stock:10000
Minimum:13
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Stock:860
Minimum:23
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