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Country CodeHITACHI
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Your search B647 and relate product result :58 items
The B647 is a NPN Silicon Transistor manufactured by STMicroelectronics. It is a general-purpose transistor used in a variety of applications. Description: The B647 is a NPN silicon transistor with a
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Description: NPN Transistor Features: Low Collector-Emitter Saturation Voltage High DC Current Gain Low Noise High Reliability Applications: Audio Amplifiers Switching Applications General
Stock:4992
Minimum:13
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Stock:500
Minimum:30
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Description: B647A is a NPN silicon epitaxial planar transistor manufactured by Hitachi. Features: - Low collector-emitter saturation voltage - High current gain - High switching speed - Low noise
Stock:10000
Minimum:13
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Description: 2SB647A is a PNP silicon epitaxial transistor manufactured by Hitachi. Features: * High DC current gain * Low collector-emitter saturation voltage * High breakdown voltage Applications:
Stock:10000
Minimum:13
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Description: 2SB647-C is a PNP silicon epitaxial transistor manufactured by Hitachi. Features: -High breakdown voltage -High current gain -High switching speed -Low collector-emitter saturation volta
Stock:10000
Minimum:3
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Description: The 2SB647A is a PNP silicon transistor manufactured by Hitachi. Features: - High current capacity - Low collector-emitter saturation voltage - Low noise - High gain Applications: - Aud
Stock:10000
Minimum:5
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Description: The 2SB647 is a PNP epitaxial planar silicon transistor manufactured by Hitachi. Features: - Low collector-emitter saturation voltage - High collector current - High gain Applications:
Stock:133
Minimum:9
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Stock:29200
Minimum:100
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Stock:10000
Minimum:2
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Description: The 2SB647C is a PNP silicon epitaxial transistor manufactured by Jiangsu Changjiang Electronics Technology Co Ltd. It is designed for use in general purpose amplifier and switching appli
Stock:10000
Minimum:4
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Description: 2SB647AC is a PNP silicon epitaxial transistor manufactured by Hitachi Ltd. Features: Low collector-emitter saturation voltage High current gain High frequency operation High breakd
Stock:10000
Minimum:4
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Description: B647A is a NPN silicon epitaxial planar transistor manufactured by Hitachi. Features: - Low collector-emitter saturation voltage - High current gain - High switching speed - Low noise
Stock:10000
Minimum:10
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Description: The B647AC is a NPN silicon epitaxial planar transistor manufactured by Hitachi. Features: - Low collector-emitter saturation voltage - High current gain - High breakdown voltage - High
Stock:10000
Minimum:4
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Stock:10000
Minimum:3
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Stock:10000
Minimum:4
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2SB647 is a PNP transistor manufactured by Hitachi. It is a low-power, low-voltage transistor with a maximum collector current of 600mA. It is commonly used in audio amplifiers, power supplies, and ot
Stock:10000
Minimum:3
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Stock:10000
Minimum:3
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Description: 2SB647 is a PNP silicon epitaxial transistor manufactured by Hitachi. Features: Low collector-emitter saturation voltage High current gain High breakdown voltage High switching spee
Stock:10000
Minimum:4
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Description: The B647AC is a NPN silicon epitaxial planar transistor manufactured by Hitachi. Features: - Low collector-emitter saturation voltage - High current gain - High breakdown voltage - High
Stock:5000
Minimum:13
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Stop production experts, we can provide a large number of electronic components that have been stopped production and are difficult to find, to facilitate the maintenance company