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Country CodeINTERNATIONAL RECTIFIER
INFINEON
Your search G4PC50UD and relate product result :17 items
Description: This is an N-Channel Enhancement Mode Power MOSFET produced by IR (International Rectifier). Features: N-Channel Enhancement Mode Low On-Resistance Low Input Capacitance Avalanche
Stock:10000
Minimum:2
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Stock:10000
Minimum:2
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Stock:10000
Minimum:2
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Description: The IRG4PC50UDPBF is a 600V, 55A, 200W, three-phase, insulated-gate bipolar transistor (IGBT) module from International Rectifier. This IGBT module is designed for use in high-power appl
Stock:5000
Minimum:1
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Stock:5000
Minimum:5
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Description: This is an Insulated Gate Bipolar Transistor (IGBT) from International Rectifier. It is a TO-247 package with an average on-state current of 50A. Features: Low saturation voltage Low ga
Stock:10000
Minimum:2
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Stock:10000
Minimum:2
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Description: Insulated Gate Bipolar Transistor (IGBT) Features: Low VCE(sat) Low Gate Charge Low Switching Losses High Speed Switching High Input Impedance High Voltage Capability High
Stock:10000
Minimum:2
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Description: This is an N-Channel Power MOSFET manufactured by International Rectifier. It has a maximum drain-source voltage of 500V and a maximum drain current of 28A. Features: Low gate charge Lo
Stock:5000
Minimum:1
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TO-3P
Infineon Technologies AG
Co-Pack IGBT over 21A, Infineon Isolated Gate Bipolar Transistors (IGBT) from Infineon provide the iser with a comprehensive range of options to ensure your appplication is covered. High effiency ratings enable this range of IGBTs to be used in a wide variety of applications and can support various switching frequencies thanks to low switching losses. IGBT co-packaged with ultrafast soft recovery anti-parallel diode for use in bridge configurations
Description: The IRG4PC50UD-EPBF is a high voltage, high speed, insulated gate bipolar transistor (IGBT) module with an integrated anti-parallel diode. Features: 600V blocking voltage High speed sw
Stock:10000
Minimum:2
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TO247
International Rectifier
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Description: IGBT, N-Channel, 600V, 50A, TO-247 Features: - Low gate charge - Low gate input capacitance - High speed switching - Low on-state resistance - High current capability Applications: - Moto
Stock:10000
Minimum:1
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Stock:10000
Minimum:2
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Stock:10000
Minimum:2
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Description: Insulated Gate Bipolar Transistor (IGBT) Features: Low VCE(sat) Low Gate Charge Low Switching Losses High Speed Switching High Input Impedance High Voltage Capability High
Stock:245
Minimum:1
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Stock:1000
Minimum:10
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Stock:1580
Minimum:10
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