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Country CodeINTERNATIONAL RECTIFIER
VISHAY
STMICROELECTRONICS
NATIONAL SEMICONDUCTOR
INFINEON
Your search IRF520 and relate product result :44 items
TO-220
International Rectifier
97+
N-Channel Enhancement Mode Power MOS TransistorsNMOSFET
Description: The IRF520 is a N-Channel MOSFET produced by International Rectifier. It has an RDS (on) of 0.44 Ohms, an Idss of 48 A, and an input capacitance of 1150 pF. Features: - Low on-state resi
Stock:10000
Minimum:2
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Stock:10000
Minimum:4
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TO-220
Vishay Siliconix
14+
N-Channel Enhancement Mode Power MOS TransistorsNMOSFET
Description: N-Channel Power MOSFET Features: - Low On-Resistance - Fast Switching - High Avalanche Energy - Low Gate Charge - Low Threshold - Low Input Capacitance - Low Output Capacitance - High Cu
Stock:10000
Minimum:3
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Description: N-Channel Power MOSFET Features: Low On-Resistance Fast Switching Low Gate Charge Low Input Capacitance High Current Capability Avalanche Rated Applications: Switch M
Stock:34828
Minimum:5
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Stock:38
Minimum:8
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Stock:10
Minimum:4
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Stock:23
Minimum:4
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Stock:50
Minimum:4
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Stock:972
Minimum:3
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TO-220
Vishay Siliconix
18+19+
N-Channel Enhancement Mode Power MOS TransistorsNMOSFET
Description: The IRF520PBF is a single N-channel enhancement mode power MOSFET. It is designed to withstand high energy in the avalanche and commutation modes. Features: Low On-Resistance Fast
Stock:10000
Minimum:5
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TO-220
International Rectifier
05+
Power MOSFETVdss = 100 V, Rdson = 0.20 Ohm, Id= 9.7A
Description: The IRF520N is a N-channel enhancement-mode power field-effect transistor (FET) designed for use in switching applications. Features: -High speed switching -Low on-resistance -Low gate dr
Stock:10000
Minimum:3
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Description: This is a N-Channel MOSFET transistor manufactured by International Rectifier. Features: Drain-Source Voltage: 100V Drain Current: 5.6A Drain-Source On-Resistance: 0.06 Ohm O
Stock:1000
Minimum:5
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Stock:20000
Minimum:5
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Stock:42
Minimum:3
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Description: N-Channel Power MOSFET Features: - Low On-Resistance - Low Gate Charge - Fast Switching - Fully Avalanche Rated Applications: - DC-DC Converters - Motor Control - Solenoid/Relay Drivers -
Stock:10000
Minimum:2
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Description: This is a N-Channel Power MOSFET with a maximum drain-source voltage of 100V and a maximum drain current of 5.6A. Features: Low On-Resistance Fast Switching Low Gate Charge Lo
Stock:10000
Minimum:2
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TO-220
International Rectifier
100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package; Similar to IRF520N with Lead Free Packaging
Description: This is a N-Channel MOSFET transistor manufactured by International Rectifier. Features: Drain-Source Voltage: 100V Drain Current: 5.6A Drain-Source On-Resistance: 0.06 Ohm O
Stock:10000
Minimum:4
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TO-220
International Rectifier
15
N-Channel Enhancement Mode Power MOS TransistorsNMOSFET
Description: The IRF520N is a N-channel enhancement-mode power MOSFET. Features: Low On-Resistance Low Gate Charge Fast Switching Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Fully
Stock:10000
Minimum:2
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TO-220
International Rectifier
15+
N-Channel Enhancement Mode Power MOS TransistorsNMOSFET
Description: This is a N-Channel MOSFET transistor manufactured by International Rectifier. Features: Drain-Source Voltage: 100V Drain Current: 5.6A Drain-Source On-Resistance: 0.06 Ohm O
Stock:10000
Minimum:2
Favorite
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