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Country CodeINTERNATIONAL RECTIFIER
INFINEON
Your search IRF520N and relate product result :20 items
TO-220
International Rectifier
05+
Power MOSFETVdss = 100 V, Rdson = 0.20 Ohm, Id= 9.7A
Description: The IRF520N is a N-channel enhancement-mode power field-effect transistor (FET) designed for use in switching applications. Features: -High speed switching -Low on-resistance -Low gate dr
Stock:10000
Minimum:3
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TO-220
International Rectifier
15
Power MOSFETVdss = 100 V, Rdson = 0.20 Ohm, Id= 9.7A
Description: The IRF520N is a N-channel enhancement-mode power MOSFET. Features: Low On-Resistance Low Gate Charge Fast Switching Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Fully
Stock:10000
Minimum:2
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Stock:972
Minimum:3
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Description: This is a N-Channel MOSFET transistor manufactured by International Rectifier. Features: Drain-Source Voltage: 100V Drain Current: 5.6A Drain-Source On-Resistance: 0.06 Ohm O
Stock:1000
Minimum:5
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Stock:42
Minimum:3
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TO-220
International Rectifier
100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package; Similar to IRF520N with Lead Free Packaging
Description: This is a N-Channel MOSFET transistor manufactured by International Rectifier. Features: Drain-Source Voltage: 100V Drain Current: 5.6A Drain-Source On-Resistance: 0.06 Ohm O
Stock:10000
Minimum:4
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TO-220
International Rectifier
15+
Power MOSFETVdss = 100 V, Rdson = 0.20 Ohm, Id= 9.7A
Description: This is a N-Channel MOSFET transistor manufactured by International Rectifier. Features: Drain-Source Voltage: 100V Drain Current: 5.6A Drain-Source On-Resistance: 0.06 Ohm O
Stock:10000
Minimum:2
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Stock:21049
Minimum:5
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Stock:21050
Minimum:5
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International Rectifier
06+
Power MOSFETVdss = 100 V, Rdson = 0.20 Ohm, Id= 9.7A
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