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Country CodeINTERNATIONAL RECTIFIER
VISHAY
SST
Your search IRFBC30 and relate product result :34 items
TO-220
International Rectifier
n/a
600V Single N-channel HexFET Power MOSFET in a TO-220AB Package
Description: N-Channel Power MOSFET Features: - Maximum Drain Source Voltage: 100V - Maximum Gate Source Voltage: ±20V - Maximum Continuous Drain Current: 30A - RDS(on): 0.065Ω - Fast Switching - Low
Stock:10000
Minimum:3
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Stock:103
Minimum:4
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Description: N-Channel Power MOSFET Features: Low On-Resistance Low Gate Charge Fast Switching Low Threshold Avalanche Rated Applications: DC-DC Converters Motor Control Sw
Stock:5310
Minimum:4
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Stock:97
Minimum:4
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Stock:13878
Minimum:5
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Stock:200
Minimum:5
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Stock:200
Minimum:5
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TO-263
International Rectifier
00+
Power Field-Effect Transistor, 3.6A I(D), 600V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, POWER, D2PAK-3
Description: The IRFBC30S is a N-channel power MOSFET from International Rectifier. Features: - Low gate charge - Low on-resistance - Low input capacitance - Avalanche rated Applications: - Switchin
Stock:10000
Minimum:2
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TO-220
Vishay Siliconix
600V Single N-channel HexFET Power MOSFET in a TO-220AB Package
Stock:10000
Minimum:2
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Stock:2889
Minimum:20
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Stock:1590
Minimum:10
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Stock:2280
Minimum:20
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Stock:695
Minimum:25
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Stock:2790
Minimum:5
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Stock:6680
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Stock:6680
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Stock:20953
Minimum:4
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