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Utsource
SOT-23/SC-59
Siemens
05+
Description: NPN Bipolar Transistor Features: Low collector-emitter saturation voltage Low noise High current gain High transition frequency High collector current Applications:
BB804 Variable Capacitance Diodes (Varicaps, Varactors) 18V 42pf-47.5pF 1.71 SOT-23/SC-59 marking SF2 Ideal HiFi tuning device
Stock:10000
Minimo:12
Consegna standard
Corriere: Arrivo previsto {0}
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SOT-23/SC-59
Infineon Technologies AG
05+
The BCW68F is a N-channel enhancement mode MOSFET transistor manufactured by Infineon Technologies. It is a surface-mount device in a SOT-23/SC-59 package. Description: The BCW68F is a N-channel enha
BCW68F PNP transistors(BJT) -60V -800mA/-0.8A 200MHz 100~250 -700mV/-0.7V SOT-23/SC-59 marking DF high current gain
Stock:10000
Minimo:4
Consegna standard
Corriere: Arrivo previsto {0}
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SOD-523/SC-79/EMD2
ROHM Semiconductor
05+
1SS390 Switching Diodes 35V SOD-523/SC-79/EMD2 marking band switch
Stock:10000
Minimo:4
Consegna standard
Corriere: Arrivo previsto {0}
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SOT-323/SC-70
Panjit
05+
Description: The BAS40CW LASM02-04T3-G is a small signal diode manufactured by Panjit. It is a surface mount device in a SOT-323/SC-70 package. Features: * Low forward voltage drop * Low leakage cur
BAS40CW lASM02-04T3-G common anodeSBD Schottky Barrier Diodes 40v 200mA/0.2A 1V SOT-323/SC-70 marking S43 fast switch
Stock:10000
Minimo:4
Consegna standard
Corriere: Arrivo previsto {0}
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3225-4R7J
TDK-Lambda
04+
Description: NLD322522T-4R7J is a 4.7uH inductor manufactured by TDK. Features: * Low DC resistance * High current capacity * Low profile Applications: NLD322522T-4R7J is commonly used in power supp
low power inductor NLD322522T-4R7J 4.7UH 3225-4R7J
Stock:10000
Minimo:4
Consegna standard
Corriere: Arrivo previsto {0}
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0805r-12V
Vishay Siliconix
07+rohs
Description: BZM55C12-TR is a 0805R-12V Zener diode manufactured by Vishay. Features: Low profile package Low leakage current High surge current capability Low thermal resistance High
BZM55C12-TR Zener Diodes 12V 500mW/0.5W Micro MELF-12V Low reverse current level/high stability/low noise
Stock:10000
Minimo:14
Consegna standard
Corriere: Arrivo previsto {0}
Consegna standard: Arrivo previsto {0}
SOT-23/SC-59
Diodes
08NOPB
Description: The 2N7002K-7 is a N-channel enhancement mode Field-Effect Transistor (FET) in a SOT-23/SC-59 package. Features: - Low on-resistance - Low input capacitance - Low gate charge - Fast swit
2N7002K-7 MOSFET N-Channel 60V 300mA/0.3A SOT-23/SC-59 marking K7K transistor/low on-resistanceRDS/Low Gate Threshold Voltage/high impedance/fast switch/ESD protection
Stock:10000
Minimo:14
Consegna standard
Corriere: Arrivo previsto {0}
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SMA/DO-214AC
Panjit
05+
Description: US1G is a unidirectional, surface mount, transient voltage suppressor diode manufactured by Panjit. Features: - Low profile package - Fast response time - Low leakage current - High sur
US1G Fast Recovery Diodes 400V 1A 1V 50nS SMA/DO-214AC marking US1G rectifier/low forward voltage/low power
Stock:10000
Minimo:13
Consegna standard
Corriere: Arrivo previsto {0}
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SOD323/SC-76/USC/0805
Chenmko
05+
Description: CH751H-40PT is a SOD323/SC-76/USC/0805 package diode manufactured by CHENMKO. Features: Low forward voltage drop High current capability Low leakage current High reliability RoHS c
CH751H-40PT SBD Schottky Barrier Diodes 40V 30mA 370mV/0.37V SOD323/SC-76/USC/0805 marking S fast switch low forward voltage
Stock:10000
Minimo:13
Consegna standard
Corriere: Arrivo previsto {0}
Consegna standard: Arrivo previsto {0}
SOT-23/SC-59
Infineon Technologies AG
1032NOPB
Manufacturer: Infineon Description: BAS40-06 is a SOT-23/SC-59 package Schottky diode. Features: - Low forward voltage drop - High current capability - High reliability - Low reverse leakage current -
BAS40-06 common cathodeSBD Schottky Barrier Diodes 40V 120mA/0.12A 1V SOT-23/SC-59 marking 46 low forward voltage
Stock:10000
Minimo:12
Consegna standard
Corriere: Arrivo previsto {0}
Consegna standard: Arrivo previsto {0}
3225-2R7J
TDK-Lambda
05NOPB
Description: NLV32T-2R7J-PF is a surface-mount inductor made by TDK. Features: This inductor has a rated inductance of 2.7uH, a rated current of 1.2A, and a tolerance of ±20%. It has a maximum DC res
low power inductor NLV32T-2R7J-PF 2.7UH 3225-2R7J 2R7J
Stock:10000
Minimo:13
Consegna standard
Corriere: Arrivo previsto {0}
Consegna standard: Arrivo previsto {0}
sot-723/VESM
11+ROHS
1SS362FV is a SOT-723/VESM package Schottky Barrier Diode manufactured by Diodes Incorporated. It has a maximum forward voltage of 0.45V and a maximum reverse current of 100uA. It is designed for use
1SS362FV 1 PAir series connection Switching Diodes 80V 100mA/0.1A sot-723/VESM marking C3 ultra highspeed switch
Stock:10000
Minimo:14
Consegna standard
Corriere: Arrivo previsto {0}
Consegna standard: Arrivo previsto {0}
SOT-23/SC-59/SMT3
ROHM Semiconductor
06nopb
Description: 2SB1198K is a PNP transistor manufactured by ROHM Semiconductor. Features: - Collector-Emitter Voltage: -50V - Collector-Base Voltage: -50V - Emitter-Base Voltage: -5V - Collector Curren
2SB1198K PNP transistors(BJT) -80V -500mA/-0.5A 180MHz 120~270 -500mV/-0.5V SOT-23/SMT3 marking AKQ high breakdown voltage
Stock:10000
Minimo:12
Consegna standard
Corriere: Arrivo previsto {0}
Consegna standard: Arrivo previsto {0}
SOT-23/SC-59/SMT3
ROHM Semiconductor
05+nopb
Description: 2SD2226K is a NPN silicon epitaxial transistor manufactured by ROHM Semiconductor. Features: Low collector-emitter saturation voltage High current gain High switching speed High rel
2SD2226K NPN Transistors(BJT) 60V 200mA/0.2A 250MHz 820~1800 300mV/0.3V SOT-23/SC-59/SMT3 marking BJV
Stock:10000
Minimo:13
Consegna standard
Corriere: Arrivo previsto {0}
Consegna standard: Arrivo previsto {0}
SOT-23/SC-59/SMT3
ROHM Semiconductor
05+
Description: 2SC3906K is a NPN transistor manufactured by ROHM Semiconductor. Features: - Low collector-emitter saturation voltage - High transition frequency - High current gain - High breakdown vol
2SC3906K NPN Transistors(BJT) 120V 50mA 140MHz 180~560 500mV/0.5V SOT-23/SC-59/SMT3 marking TE high voltage amplifier
Stock:10000
Minimo:13
Consegna standard
Corriere: Arrivo previsto {0}
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SOT-163/SMT6/SC-74
ROHM Semiconductor
06+rohs
The IMX1 is a P-channel MOSFET manufactured by ROHM. It is packaged in a SOT-163/SMT6/SC-74 package. Description: The IMX1 is a P-channel MOSFET with a drain-source voltage of -20V and a maximum drai
IMX1 NPN+NPN Complex Bipolar Transistor 60V 0.15A HEF=120~560 SOT-163/SMT6/SC-74 marking X1 switch and digital circuit application
Stock:10000
Minimo:13
Consegna standard
Corriere: Arrivo previsto {0}
Consegna standard: Arrivo previsto {0}
SMA/DO-214AC
Diodes
04+
Description: The B130L-13 is a high-speed, low-capacitance, surface-mount Silicon Rectifier Diode with an ultra-small SMA package. Features: * Low forward voltage drop * Low reverse leakage current *
B130L-13 SBD Schottky Barrier Diodes 30V 1A 430mV/0.43V SMA/DO-214AC marking B130L low forward voltage Schottky Rectifiers
Stock:10000
Minimo:13
Consegna standard
Corriere: Arrivo previsto {0}
Consegna standard: Arrivo previsto {0}
SOT-363
Infineon Technologies AG
07+NOPB
The BC846PN is a PNP Bipolar Transistor from Infineon Technologies. It is a small signal transistor in a SOT-363 (SC-88A) package. Description: The BC846PN is a PNP Bipolar Transistor designed for g
BC846PN NPN+PNP Complex Bipolar Transistor 80V/-80V 100mA/-100mA 200~450 SOT-363 marking 10 switch and digital circuit application
Stock:10000
Minimo:12
Consegna standard
Corriere: Arrivo previsto {0}
Consegna standard: Arrivo previsto {0}
SOT-23/SC-59/SMT3
ROHM Semiconductor
05+nopb100
Description: 2SD1782K is a PNP transistor manufactured by ROHM Semiconductor. Features: - Low collector-emitter saturation voltage - High collector current - High transition frequency - High collect
2SD1782K NPN Transistors(BJT) 80V 500mA/0.5A 180MHz 180~390 200mV/0.2V SOT-23/SC-59/SMT3 marking AJR
Stock:10000
Minimo:14
Consegna standard
Corriere: Arrivo previsto {0}
Consegna standard: Arrivo previsto {0}
SOT-23/SC-59/SMT3
ROHM Semiconductor
05+
Description: 2SD2114K is a silicon NPN epitaxial planar type transistor manufactured by ROHM Semiconductor. Features: High breakdown voltage Low collector-emitter saturation voltage Low col
2SD2114K NPN Transistors(BJT) 25V 500mA/0.5A 350MHz 820~1800 180mV/0.18V SOT-23/SC-59/SMT3 marking BBV
Stock:10000
Minimo:17
Consegna standard
Corriere: Arrivo previsto {0}
Consegna standard: Arrivo previsto {0}
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Numero verde a disposizione
(888) 766 5577 USA & Canada
+52 5515436027
+52 5515436028 Messico
+49 6931090199 Germania
+1 (657) 605-6198 USA
+52 5641347253 Messico
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