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TO-252
STM
09+
Description: The LM317M is a 3-terminal adjustable regulator capable of supplying in excess of 1.5 A over an output voltage range of 1.2 V to 37 V. Features: Output voltage range of 1.2 V to 37 V
TO-220
Sanken Electric
03+
Description: 2SC2168 is a NPN silicon epitaxial transistor manufactured by Sanken Electric Co., Ltd. It is designed for general purpose switching and amplifier applications. Features: * High DC curre
TO-252
On Semiconductor
04+
Parameter Symbol Min Typ Max Unit Notes Rated Forward Voltage VF - 0.85 1.10 V @ IF = 32A, TA = 25°C Peak Forward Surge Current IFSM - 1600 - A (8.3ms single half sine-wave, TC = 25°C) Re
TO-220F
04+PBF
2SD2012 is a NPN silicon epitaxial transistor manufactured by Toshiba. It is a power transistor with a maximum collector current of 2A and a maximum collector-emitter voltage of 60V. It is commonly us
SOT23-6
MBI
15+
MBI6651G is a SOT23-6 package N-channel MOSFET. It is designed for high-side load switching applications. Description: MBI6651G is an N-channel MOSFET with a SOT23-6 package. It is designed for high-
TO-220F
ROHM Semiconductor
01+
Description: The BA033T is a PNP transistor manufactured by ROHM Semiconductor. It is housed in a TO-220F package and is designed for use in general purpose switching and amplifier applications. Feat
IC REG LINEAR 3.3V 1A TO220FP
SSOP24
MBI
15+
Parameter Symbol Min Typ Max Unit Description Supply Voltage VDD 3.0 5.0 5.5 V Operating supply voltage range Output Current per Channel IOUT - 60 120 mA Maximum output current per channel
SOT23
CJ
09+
Parameter Symbol Min Typ Max Unit Collector-Emitter Voltage VCEO - - 40 V Collector-Base Voltage VCBO - - 60 V Emitter-Base Voltage VEBO - - 5 V Collector Current IC - - 3 A Base Curren
TO-220
Fairchild
2010+PBF
Description: The FQP13N50C is a N-Channel MOSFET with a maximum drain current of 13A and a maximum drain-source voltage of 500V. Features: Low On-Resistance Low Input Capacitance Low Input a
SOT-143
NEC
04+
Parameter Description Value Unit Type Component Type MOSFET - Part Number - 3SK131A-T2 - Package Encapsulation TO-220 - VDS (Max) Drain-Source Voltage 450 V VGS (Max) Gate-Source Voltag
TO-220
Fairchild
01+
Description: N-Channel MOSFET Features: - 500V Drain-Source Breakdown Voltage - 9A Continuous Drain Current - Low Gate Charge - Low On-Resistance - Fast Switching Speed Applications: - DC-DC Converter
TO-247
STMicroelectronics
06+
Description: STW14NK50Z is a N-channel MOSFET transistor manufactured by STMicroelectronics. Features: Low on-resistance Low gate charge Low input capacitance Fast switching Avalanche rated RoH
TO-220
National Semiconductor
09+
Description: The LM2937ET-12 is a low dropout (LDO) voltage regulator with a fixed output voltage of 12V. Features: Output voltage: 12V Dropout voltage: 0.2V Output current: 1A Operating
IC REG LINEAR 12V 500MA TO220-3
TO-92
HTC
2011+
Description: The LM78L05 is a three-terminal positive voltage regulator with a fixed output voltage of 5V. Features: * Output Voltage: 5V * Output Current: 100mA * Line Regulation: 0.2% * Load Regula
SOT23-3
Microchip Technology
10+
Parameter Symbol Conditions Min Typical Max Unit Input Voltage VIN Operating Range 2.7 - 5.5 V Output Voltage VOUT Regulation Range 1.8 3.0 5.0 V Output Current IOUT Continuous - 300 - mA
TO-220F
07+
Description: 2SK4112 is a N-channel MOSFET manufactured by Toshiba. Features: - Low on-resistance - High-speed switching - Low gate charge - Low input capacitance - Low output capacitance - High-vol
TO92
HT
13+
Parameter Description Value Unit Input Voltage (VIN) Operating input voltage range 2.0 to 5.5 V Output Voltage (VOUT) Regulated output voltage 3.0 V Output Current (IOUT) Continuous output
QFP-128
Broadcom
07+
The BCM5325MA2KQM is a Broadcom Ethernet switch chip. It is a QFP-128 package and is designed for use in Ethernet switches, routers, and other networking applications. The BCM5325MA2KQM features a hi
TO-220
International Rectifier
07+
Description: This is a N-Channel Power MOSFET Transistor manufactured by International Rectifier. Features: Low on-state resistance Low gate charge Fast switching Avalanche rated High
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