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国コードSOP16
On Semiconductor
Parameter Symbol Min Typ Max Unit Description Input Voltage VIN 2.7 - 5.5 V Operating input voltage range Output Voltage VOUT - 1.8 - V Fixed output voltage Quiescent Current IQ - 60 - μA S
SOP54
ROHM Semiconductor
Parameter Symbol Min Typical Max Unit Supply Voltage Vcc 1.8 - 5.5 V Output Current Iout - 200 - mA Quiescent Current Iq - 1.5 - μA Operating Temp Toper -40 - 85 °C Storage Temp Tstg -6
VSSOP-10
Texas Instruments
18+
Parameter Symbol Conditions Min Typ Max Unit Input Voltage VIN - 4.5 - 36 V Output Voltage Range VOUT - 0.8 - 36 V Switching Frequency fSW - - 650 - kHz Quiescent Current IQ VIN = 12V, No
TSSOP86
Micron Technology
02+03+
Parameter Description Value Device Type 2M x 32-bit Synchronous DRAM Package TQFP-48 Supply Voltage (Vcc) Operating supply voltage 3.3V Access Time (tAC) Access time from clock 6 ns C
QFN48
Microsemi
1705+
Parameter Description Value Unit Device Name High Voltage Power MOSFET PD69108FILQ-TR Package Type PowerTrench? LFPAK56 (DDPAK) Lead Finish Matte Tin Mounting Type Surface Mount O
SOP-8
International Rectifier
07+
Parameter Symbol Min Typ Max Unit Conditions Drain-source voltage VDSS 60 V Gate-source voltage VGS ±20 V Continuous drain current ID 14 A TC = 25°C Pulse drain current IDM 78 A
TO-92
KEC
00
Parameter Symbol Min Typ Max Unit Collector-Emitter Voltage VCEO - - 30 V Collector-Base Voltage VCBO - - 45 V Emitter-Base Voltage VEBO - - 5 V Collector Current IC - - 150 mA Base Cur
N/A
DS
05+
Parameter Description DS1204U Specifications Supply Voltage Operating voltage range 3.0V to 5.5V Output Current Maximum output current per channel ±60mA Number of Channels Number of channel
SOP8
Texas Instruments
07+G4
Parameter Symbol Min Typ Max Unit Description Input Voltage V_IN 10 75 V Operating input voltage range Switching Frequency f_SW 65 300 kHz Adjustable switching frequency Output Power P_OU
DIP
NEC
8714+
Parameter Description Conditions Min Typ Max Unit Supply Voltage (VCC) Operating supply voltage 4.75 5.25 V Output Low Voltage (VOH) Output voltage when output is low IO = 4 mA 0.5 V Ou
QFP
Sony
2011+
Parameter Symbol Conditions Min Typ Max Unit Supply Voltage VDD Operating 2.7 - 5.5 V Standby Current ISB VDD = 3V - 0.1 - μA Operating Current IOP VDD = 3V, f = 44.1kHz 1.5 - 2.5 mA Inpu
QFP
STMicroelectronics
12+PB
Parameter Symbol Conditions Min Typ Max Unit Supply Voltage VDD Operating 2.7 5.5 V Output Current IOUT Continuous 100 mA Quiescent Current IQ VDD = 5V 1.5 μA Shutdown Current ISD VS
TO-3P
HW
Parameter Description Value Unit Input Voltage (V_IN) Operating voltage range 2.7 to 5.5 V Output Voltage (V_OUT) Regulated output voltage 3.0 V Output Current (I_OUT) Continuous output cur
DIP42
Toshiba
Parameter Symbol Min Typ Max Unit Description Supply Voltage VDD 2.5 3.3 5.5 V Operating supply voltage range Operating Temperature Toper -40 85 °C Operating temperature range Storage Temp
Maxim Integrated
07+
Parameter Symbol Conditions Min Typ Max Unit Supply Voltage VCC Operating 2.7 - 5.5 V Output Current per Pin IO Continuous - 10 - mA Propagation Delay Time tpd VCC = 5V, TA = 25°C - 8 - ns
Texas Instruments
Parameter Symbol Conditions Min Typ Max Unit Supply Voltage VDD Operating 2.7 - 5.5 V Quiescent Current IQ VDD = 5V, BTL mode - 1.8 - mA Output Power POUT RL = 4Ω, THD = 10% - 0.65 - W Ef
SSOP36
STMicroelectronics
09
Parameter Symbol Min Typ Max Unit Description Supply Voltage VDD 2.7 5.5 V Operating supply voltage Output Current IOUT 100 300 mA Maximum output current per channel Power Dissipation PD
PG-DSO-16
Infineon Technologies AG
1822+PB
Parameter Description Value Unit Input Voltage Operating input voltage range 2.7 to 5.5 V Output Voltage Fixed output voltage 1.8 V Quiescent Current Current consumption in operation 40 μA
TO126
On Semiconductor
0748+
Parameter Symbol Conditions Min Typ Max Unit Collector-Emitter Voltage VCEO 80 V Collector-Base Voltage VCBO 80 V Emitter-Base Voltage VEBO -5 V Collector Current IC Continuous
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