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Utsource
SOP8
Texas Instruments
16+
Parameter Symbol Conditions Min Typ Max Unit Input Voltage V_IN -0.3 40 V Output Voltage V_OUT No load 1.2 37 V Quiescent Current I_Q V_IN = 5V 5 mA Dropout Voltage V_DROPOUT I_OUT =
SOT23
On Semiconductor
05+
Parameter Symbol Conditions Min Typ Max Unit Breakdown Voltage VBR I = 1 mA 5.6 V Maximum Standoff Voltage VRWM 4.3 V Peak Pulse Current Ipp tp = 8.3 ms, Repetition Rate 1/s 0.6 A
DIP-14
Fairchild
11+
Parameter Symbol Min Typical Max Unit Condition Supply Voltage Vcc 4.5 - 20 V - Gate Drive Current (High-side) IOH - 1.2 - A Vcc = 15V, VGS = 10V Gate Drive Current (Low-side) IOL - -1.2 -
SOP8
International Rectifier
2017+
Description: The IR2104S is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. It is specifically designed to drive the gates of po
Description: The ADUM1311ARWZ is a dual-channel isolated digital isolator with integrated signal conditioning and high-speed data transmission. It is designed to provide a high-speed, low-power, and l
SSOP28
Microchip Technology
17
Parameter Description Value/Range Package Type Package style SSOP (Shrink Small Outline Package) Pin Count Number of pins 20 Operating Voltage Supply voltage range 2.0V to 5.5V Operating
N/A
Parameter Value Unit Type N-Channel MOSFET - Package TO-220 - Maximum Drain Current 50 A Maximum Drain-Source Voltage 500 V Maximum Gate-Source Voltage ±20 V Maximum Power Dissipation
HSSOP-24
NXP Semiconductors
Parameter Description Value Unit Package Type HSSOP-24 - Part Number Identifier TDA8950TH/N1,118 - Supply Voltage VCC Operating Range 4.5 to 18 V Quiescent Current IQ (Typical) 2.5 mA O
TO220F
Ineinfon
07+
Parameter Symbol Min Typ Max Unit Notes On-State Resistance RDS(on) - 360 - mΩ @ VGS=10V, ID=25A Gate Charge QG - 180 - nC Input Capacitance Ciss - 4500 - pF @ VDS=600V Output Capacitanc
ZIP-15
Parameter Symbol Min Typ Max Unit Description Supply Voltage VCC 2.7 - 36 V Operating supply voltage range Quiescent Current IQ - 3.6 - mA Quiescent current at no load, VCC = 5V Output Curr
TO247
KEC
19+
Parameter Symbol Min Typ Max Unit Description Blocking Voltage V(BR)DSS - - 600 V Drain-Source Breakdown Voltage Continuous Drain Current ID - 13 - A At Tc = 25°C Total Power Dissipation PD
DIP20
Philips
87+
Parameter Symbol Min Typical Max Unit Conditions Supply Voltage VCC 2 6 V Output High Level Voltage VOH VCC - 0.3 V IO = -1mA, TA = 25°C Output Low Level Voltage VOL 0 0.3 V IO = 1mA,
TSSOP14
Philips
02+
Parameter Symbol Min Typ Max Unit Conditions Supply Voltage VCC 20 V Output Leakage Current IOL ±1 μA VCC = 5V Input Leakage Current IIH, IIL ±1 μA VCC = 5V ON-State Resistance RON
TO-263
Toshiba
17+
Parameter Symbol Min Typical Max Unit Notes Breakdown Voltage V(BR)DSS - 1000 - V Continuous Drain Current ID - 16 - A @ Tc=25°C Pulse Drain Current IGM - 160 - A @ Tc=25°C, tp=10μs, duty
LQFP48
STMicroelectronics
new cycle
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