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国コード
Utsource
MSOP
Atmel
1136+
Description: AT25512-TH-T is an 8-bit microcontroller from Atmel Corporation. Features: - 8-bit AVR RISC architecture - 32K bytes of In-System Programmable Flash - 2K bytes EEPROM - 2K bytes SRAM - 3
IC EEPROM 512K SPI 20MHZ 8TSSOP
SOJ-32
Integrated Device Technology
03+
Description: 32K x 4 Static RAM Features: Low power CMOS technology Fast access time: 15ns Single 5V ± 10% power supply TTL compatible inputs/outputs Fully static operation No clocks
IC SRAM 1M PARALLEL 32SOJ
PLCC-44
STMicroelectronics
10
Parameter Description Value Unit Type EPROM M27C4002-10C1 Memory Capacity Total memory capacity 512 Kbits Organization Memory organization 64K x 8 Supply Voltage (Vcc) Operating supply
BGA
Sandisk
18+
Manufacturer: Sandisk Description: SDINBDA4-64G is a 64GB embedded MultiMediaCard (eMMC) with a ball grid array (BGA) package. Features: 64GB capacity High-speed data transfer Low power con
SOP8
Ramtron
10+PB
Description: The FM25V02-G is a 2Mb (256K x 8) nonvolatile ferroelectric RAM (F-RAM) from Ramtron. Features: 2Mb (256K x 8) nonvolatile ferroelectric RAM (F-RAM) Low power consumption High
IC FRAM 256K SPI 40MHZ 8SOIC
DIP-28
Dallas
Description: The DS1230Y-120 is a nonvolatile SRAM memory module from Dallas Semiconductor. It is a 28-pin DIP package with a maximum operating voltage of 5.5V. Features: Low power consumption Fast
IC NVSRAM 256K PARALLEL 28EDIP
TSSOP8
Microchip Technology
Parameter Description Value Product Name AT24CM01-XHD-B Manufacturer Microchip Technology Series AT24C Memory Size EEPROM Memory 1 Mbit (128 K x 8) Interface I2C Operating Voltage
DIP
Atmel
9647+
Description: The AT27C256R-12PC is a CMOS 256K-bit (32K x 8) Electrically Erasable Programmable Read-Only Memory (EEPROM) manufactured by Atmel Corporation. Features: - Low power CMOS technology - Fa
IC EPROM 256K PARALLEL 28DIP
DIP-8
SST
04+
Description: AT93C57-10PC is a non-volatile memory device manufactured by Atmel Corporation. It is an 8-pin DIP (Dual Inline Package) with a Serial Peripheral Interface (SPI) bus. Features: Low v
IC EEPROM 2K SPI 2MHZ 8DIP
SOP8
AT
03+
Description: AT25160N-10SI-2.7 is an 8-pin Serial EEPROM with an I2C interface. It is a non-volatile memory device that can be used to store data and is ideal for applications that require frequent up
IC EEPROM 16K SPI 3MHZ 8SOIC
SOP
Atmel
1222+
Parameter Description Min Typ Max Unit Storage Capacity Memory Size - 1 - Kbit Organization Memory Organization - 128 x 8 - bytes Operating Voltage (Vcc) Supply Voltage Range 1.8 - 5.5 V
IC EEPROM 1K I2C 1MHZ 8SOIC
SOP8
Atmel
1348+
Description: The AT24C16C-SSHM-T is a 16K-bit serial electrically erasable programmable read-only memory (EEPROM) from Atmel. It is available in an 8-pin SOP package and operates over a temperature r
IC EEPROM 16K I2C 1MHZ 8SOIC
TSOP28
Atmel
11+PB
Description: AT27C256R-70TU is a 256Kbit CMOS UV erasable and electrically programmable read-only memory (EEPROM) from Atmel. Features: - Operating voltage range of 4.5V to 5.5V - Low power consumpti
IC EPROM 256K PARALLEL 28TSOP
TSSOP48
STMicroelectronics
06+
Description: NAND01GW3B2AN6E is a 1 Gb (128M x 8 bit) NAND Flash Memory manufactured by STMicroelectronics. Features: Single power supply voltage: 2.7V to 3.6V High speed data transfer rate: up t
IC FLASH 1G PARALLEL 48TSOP
TSOP54
ISSI
05+
Description: IS42S16160D-7TL is a 16Mb (2M x 8) Synchronous DRAM (SDRAM) organized as 262,144 words by 8 bits. It is fabricated using ISSI's high-performance CMOS technology. Features: - Fast access
IC DRAM 256M PARALLEL 54TSOP
01+
Dallas
DIP
DALLAS) Description: The DS1230Y-200 (01+, DALLAS) is a non-volatile SRAM memory module from Dallas Semiconductor. It is a 32K x 8 SRAM with a battery-backed, low-power CMOS design. The module has a
IC NVSRAM 256K PARALLEL 28EDIP
TSOP
ISSI
10+
Description: IS62WV51216BLL-55TLI is a 512K x 16-bit low-power CMOS static RAM organized as 65,536 words by 16-bits. Features: 512K x 16-bit low-power CMOS static RAM 65,536 words by 16-bits Sing
IC SRAM 8M PARALLEL 44TSOP II
TSOP86
Micron Technology
13+
Description: The MT48LC4M32B2P-6:G is a 4M x 32-bit (128Mb) Dynamic Random Access Memory (DRAM) with fast page mode. Features: - Fast page mode - 4M x 32-bit (128Mb) - 3.3V power supply - Fast acces
IC DRAM 128M PARALLEL 86TSOP II
DIP8
Atmel
16+
Description: The AT24C04C-PUM is a 4Kbit Electrically Erasable Programmable Read-Only Memory (EEPROM) from Atmel. It is organized as 512 words of 8 bits each and is optimized for use in consumer, indu
TSSOP
Spansion
10+
Description: S29GL256P11TFI020 is a 256Mb (32M x 8/16M x 16) CMOS 3.0 Volt-only, uniform sector Flash memory device. Features: Single power supply operation VCC = 2.7V to 3.6V Access time: 70/90/1
IC FLASH 256M PARALLEL 56TSOP
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