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첫페이지 > 전자 부품 > IC 칩 > CD40 시리즈 디지털 집적 회로
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SOP3.9MM
On Semiconductor
16+
Description: 8-Bit Parallel-In/Serial-Out Shift Register Features: - High-Speed Operation: tpd = 10 ns (typ) at VCC = 5V - Low Power Consumption: ICC = 0.8 μA (max) at Ta = 25°C - High Noise Immunity
DIP8
Texas Instruments
16+
Parameter Conditions Min Typ Max Unit Supply Voltage (Vcc) Operating 1.8 - 5.5 V Output Low Voltage (VOH) IO = 0.4 mA, Vcc = 5 V - - 0.9 V Output High Voltage (VOL) IO = 16 mA, Vcc = 5 V -
3.9MM
STM
RF Bipolar Transistor; Collector Emitter Voltage, Vceo:3V; Transistor Polarity:Dual P Channel; Power Dissipation:150W; C-E Breakdown Voltage:200V; DC Current Gain Min hfe:35; Collector Current:15A; DC Current Gain Max hfe:160
CDIP
Ti/ns
Parameter Conditions Min Typ Max Unit Supply Voltage (VDD) -0.5 18 V Input Voltage (VIN) -0.5 VDD+0.5 V Output Voltage (VOH) VDD = 15V, IOH = -1mA 13.8 V Output Voltage (VOL) VDD =
SOP3.9MM
On Semiconductor
16+
Description: The ULN2003ADR2G is a high-voltage, high-current Darlington transistor array. It consists of seven NPN Darlington pairs that feature high-voltage outputs with common-cathode clamp diode f
SOP14
STMicroelectronics
02
Parameter Description Part Number HCF4093 Function Quad 2-input NAND Schmitt Trigger Gate Technology CMOS Supply Voltage (VDD) 3 V to 18 V Input Voltage (VIH) Minimum: 0.7 * VDD, Maximu
DIP-16
STMicroelectronics
05+
Description: The HCF4046BE is a CMOS integrated circuit which contains three phase-locked loops (PLLs). Features: - Low power consumption - High noise immunity - Low power-supply current - Low extern
MICRMICROPOWER PHASE-LOCKED LOOP _
DIP
On Semiconductor
16+
Below is the parameter table and instructions for the UC2845BN, a fixed frequency current mode controller designed for high-performance off-line and DC-DC converters. UC2845BN Parameter Table Param
DIP
Texas Instruments
16+
Parameter Symbol Conditions Min Typ Max Unit Supply Voltage VCC Operating 4.75 5.0 5.25 V Input Voltage (High) VIH - 2.0 - VCC V Input Voltage (Low) VIL - 0 0.8 - V Output Voltage (High)
DIP
95
Parameter Symbol Min Typ Max Unit Description Supply Voltage VDD 18 V Maximum supply voltage Input Low Level Voltage VIL 0.8 V Maximum input low-level voltage Input High Level Voltage V
SOP9
Atmel
16+
Parameter Description Value Unit Device Type Non-Volatile Serial EEPROM 2-Wire Compatible - Memory Size Total Memory 512 Kbits (64 Kbytes) - Organization Organization 64K x 8 - Operating
CDIP14
Texas Instruments
99+
Description: The CD4001BF is a quad 2-input NOR gate integrated circuit from Texas Instruments. Features: - Low power consumption - Low input current - High noise immunity - High speed operation - Hi
NOR Gate 4-Element 2-IN CMOS 14-Pin CDIP Tube
TO92
National Semiconductor
16+
NSC) Description: LM35DZ is a precision integrated-circuit temperature sensor, whose output voltage is linearly proportional to the Celsius (Centigrade) temperature. Features: Calibrated directly i
PLCC
Atmel
16+
Parameter Description Value Device Name Microcontroller AT89S52-24JU Package Type DIP (Dual Inline Package) 40-pin Operating Voltage Supply Voltage Range 4.5V to 5.5V Clock Frequency Maxi
CDIP-14
Ti/fsc
00+/95+
Description: The CD4066BF is a quad bilateral switch designed for the transmission or multiplexing of analog or digital signals. Features: Low On-Resistance: 250 Ω max Low Off-Leakage Current: 0.
CMOS QUAD BILATERAL SWITCH
DIP
On Semiconductor
16+
Parameter Symbol Conditions Min Typical Max Unit Supply Voltage VCC Operating 2.7 - 36 V Input Voltage Range VIN Relative to Ground 0 - VCC - 1.5 V Output Voltage Swing VOUT Load = 10 kΩ 0
SOP
Thomson
16+
Parameter Description Value Unit Number of Darlington Pairs Number of Darlington transistor pairs 7 - Maximum Collector-Emitter Voltage (VCE) Maximum voltage that can be applied between the c
DIP
Texas Instruments
Parameter Symbol Conditions Min Typ Max Unit Supply Voltage VDD 3 10 15 V Input Low Voltage VIL VIN ≤ 0.8 0 0.8 V Input High Voltage VIH VIN ≥ 2.0 2.0 VDD V Output Low Voltage VOL IO =
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