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Utsource
H2S
Mitsubishi
2017+
Silicon RF Devices RF High Power MOS FET Modules RA55H3340M Remarks RoHS : Restriction of the use of certain Hazardous Substances in Electrical and Electronic Equipment
H46S
Mitsubishi
2015+
Silicon RF Devices RF High Power MOS FET Modules RA07H4452M Remarks RoHS : Restriction of the use of certain Hazardous Substances in Electrical and Electronic Equipment
HYB
Sanyo
08
SANYO) Description: The STK433-330 (HYB, SANYO) is a hybrid IC (Integrated Circuit) containing an amplifier and power supply circuit. It is designed for use in audio power amplifiers. Features: Hi
H2S
Mitsubishi
2017+
Silicon RF Devices RF High Power MOS FET Modules RA30H4452M Remarks RoHS : Restriction of the use of certain Hazardous Substances in Electrical and Electronic Equipment
H2M
Mitsubishi
2018+
Silicon RF Devices RF High Power MOS FET Modules RA30H3340M Remarks RoHS : Restriction of the use of certain Hazardous Substances in Electrical and Electronic Equipment
TO-272
Freescale
11+
1805- 1990 MHz, 100 W, 28 VGSM/GSM EDGELATERAL N - CHANNELRF POWER MOSFETs
H2M
Mitsubishi
2017+
Silicon RF Devices RF High Power MOS FET Modules RA60H3847M1 Remarks RoHS : Restriction of the use of certain Hazardous Substances in Electrical and Electronic Equipment
H2S
Mitsubishi
2017+
Parameter RA60H1317M RA60H1317M-101 Type Resistor Array Resistor Array Configuration 4 Resistors 4 Resistors Resistance 10.0 kΩ 10.0 kΩ Tolerance ±1% ±1% Power Rating (W) 0.25 W 0.25 W
H2M
Mitsubishi
2018+
Silicon RF Devices RF High Power MOS FET Modules RA30H2127M1 Remarks RoHS : Restriction of the use of certain Hazardous Substances in Electrical and Electronic Equipment
TO-272
Freescale
09+，07+
RF LDMOS Wideband IntegratedPower Amplifiers 1805-1990MHZ 15W 26V for cellular applications: GSM, GSM EDGE, PHS,TDMA, CDMA, W - CDMA and TD - SCDMA
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