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첫페이지 > 전자 부품 > 트랜지스터 > 바이폴라 트랜지스터
Utsource
TO-220
HY
19+
Description: The HY3003P is a three-terminal adjustable linear regulator with a maximum output current of 100A. It is designed to provide a constant output voltage of 30V and is suitable for a wide r
domestic
TO-263
HY
19+
Description: The HY3210B is a 100V120A TO-263 replaceable SUM110N10-09 IRFS4310Z (TO-263，HY) MOSFET. It is designed for use in high-power switching applications such as motor control, DC-DC converter
domestic
TO-220
HY
19+
Parameter Value Part Number HY3906P Package Type TO-220 Voltage Rating (Vds) 60V Current Rating (Id) 190A Replacement For FDP038AN06AO Max Power Dissipation (Ptot) 350W Max Junction
domestic
TO-263
HY
19+
Description: The HY3704B is a TO-263 package, 40V176A replaceable, IRL1004S, IRF4104S, and IRF140 power MOSFET. It is designed for use in high-power switching applications such as DC-DC converters, m
domestic
TO-220F
Magnachip Semiconductor
13+
Parameter MDF7N50TH MDF7N50 Type N-Channel MOSFET N-Channel MOSFET VDS (Max Voltage) 500 V 500 V RDS(on) (Typical) 1.2 Ω at VGS = 10V 1.2 Ω at VGS = 10V ID (Continuous) 4 A at Tc = 25°C 4
TO-220
HY
19+
Parameter Value Component HY3215P Encapsulation TO-220 Voltage Rating (Vds) 150V Current Rating (Id) 120A Replaces FDP075N15A Package Type Through-Hole Operating Temperature -55°C t
domestic
TO126
NEC
13+
Parameter Symbol Min Typ Max Unit Conditions Collector-Emitter Voltage VCEO - - 600 V IC = 0.1 mA, IB = 0 Emitter-Collector Voltage VECS - - 600 V IC = 0.1 mA, IB = 0 Base-Emitter Voltage (
TO92
NXP Semiconductors
19+
Parameter Symbol Min Typ Max Unit Notes Rated On-State Current IT(RMS) - 8 - A Peak On-State Current ITSM - 50 - A 10 ms, non-repetitive On-State Voltage VT - 1.4 - V @ IT = 8 A, Tj = 25°C
TO-3p
FSC
Parameter Symbol Conditions Min Typ Max Unit Drain-source on-resistance RDS(on) VGS = 10V, ID = 7A - 7.0 - mΩ Gate-source threshold voltage VGS(th) ID = 250μA 1.0 1.5 2.5 V Continuous drain
TO-220
HY
19+
Parameter Value Part Number HY3410P Package Type TO-220 Voltage Rating (Vds) 100V Current Rating (Id) 140A Power Dissipation 150W Rds(on) @ Vgs=10V 2.5mΩ Gate Charge (Qg) 110nC Th
domestic
TO-220
HY
19+
Parameter Value Unit Encapsulation TO-220 - Voltage Rating (Vds) 80 V Current Rating (Id) 100 A Power Dissipation (Pd) 150 W Rds(on) 4.5 mΩ Gate Charge (Qg) 110 nC Junction Temperat
domestic
to-247
Parameter Value Unit Part Number IKW08T120 - Package Type TO-247 - Status Original Stock - VDS (Max Drain-Source Voltage) 120 V ID (Continuous Drain Current) 8 A RDS(on) (On-State Res
TO-3P
Fairchild
Parameter Symbol Min Typical Max Unit Conditions Drain-Source Voltage VDS - - 200 V Gate-Source Voltage VGS -15 - 15 V Continuous Drain Current ID - - 65 A Tc = 25°C Pulse Drain Current
TO-220
HY
19+
Description: The HY3210P 100V120A is a high-performance, high-efficiency, and low-cost power MOSFET. It is designed for use in a wide range of applications, including power supplies, motor control, a
domestic
TO-247
Infineon Technologies AG
19+
Parameter Symbol Value Unit Maximum Drain-to-Source Voltage VDS 600 V Continuous Drain Current (Tc = 25°C) ID 34 A Continuous Drain Current (Tc = 100°C) ID 24 A Pulse Drain Current (Tc =
to-247
Description: The MJH11021 is a NPN Darlington Transistor in a TO-247 package. It is designed for use in power switching applications. Features: NPN Darlington Transistor TO-247 Package High Curr
TO-263
HY
19+
Parameter Value Part Number HY1908B Package Type TO-263 (D2PAK) Maximum Drain Voltage 80V Continuous Drain Current 90A (at Tc = 25°C) Pulse Drain Current 180A (t = 10ms, Tc = 25°C) Ga
domestic
TO-220
On Semiconductor
13+
Parameter Symbol Min Typ Max Unit Input Voltage VIN 8 - 30 V Output Voltage VOUT 12 12 12 V Output Current IOUT - 1 1.5 A Quiescent Current IQ - 5 10 mA Dropout Voltage VDROP - 1.3 1.7
TO-220
HY
19+
Description: The HY3403P is a three-terminal, high-efficiency, high-current, low-voltage, monolithic integrated circuit designed for use as a step-down (buck) switching regulator. It is capable of de
domestic
TO-263
HY
19+
Description: The HY3210B is a 100V120A TO-263 replaceable SUM90N10-8M2P IRF3610S MOSFET. It is designed to provide high performance and low on-state resistance for power switching applications. It ha
domestic
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