Utsource 사이트에 들어가려면 여기를 클릭하세요
Dear customers, due to the implementation of the GDPR policy in Europe, UTSOURCE has also made adjustment accordingly to meet the policy requirements. Please read the new privacy policy carefully and this window will no longer pop up after you accept it.
Delivery Address
+ 주소추가
새로운화물운송주소
* 추적 정보를 제때받을 수 있도록 휴대폰 번호를 정확하게 입력하십시오.
국가 코드검색 결과 필터:
첫페이지 > 전자 부품 > 트랜지스터 > 바이폴라 트랜지스터
Utsource
TO-247
Parameter Symbol Min Typical Max Unit Collector-Emitter Voltage Vceo - 600 - V Collector-Base Voltage Vcbo - 650 - V Emitter-Base Voltage Vebo -1 - 5 V Continuous Collector Current Ic - 1
TO-220F
Magnachip Semiconductor
13+
Parameter MDF7N50TH MDF7N50 Type N-Channel MOSFET N-Channel MOSFET VDS (Max Voltage) 500 V 500 V RDS(on) (Typical) 1.2 Ω at VGS = 10V 1.2 Ω at VGS = 10V ID (Continuous) 4 A at Tc = 25°C 4
TO-220
International Rectifier
Parameter Symbol Min Typ Max Unit Continuous Drain Current ID - 60 - A Pulse Drain Current IDM - 120 - A (t = 10 μs) Gate-Source Voltage VGS -15 - 20 V Drain-Source Breakdown Voltage V(BR
TO92
NXP Semiconductors
19+
Parameter Symbol Min Typ Max Unit Notes Rated On-State Current IT(RMS) - 8 - A Peak On-State Current ITSM - 50 - A 10 ms, non-repetitive On-State Voltage VT - 1.4 - V @ IT = 8 A, Tj = 25°C
TO-220F
Apec
09+
Parameter Symbol Conditions Min Typ Max Unit Input Voltage VIN Continuous 2.7 5.5 V Output Voltage VOUT Fixed 3.3 V Output Current IOUT Continuous 1.0 A Quiescent Current IQ VIN = 5V
TO-220F
11+
Parameter / Model 2SJ303 J303 2SJ303-AZ Type PNP Power Transistor PNP Power Transistor PNP Power Transistor Collector-Emitter Voltage (Vceo) 100 V 100 V 100 V Emitter-Base Voltage (Vebo) 5
TO-247
Mospec
05+
Parameter Symbol Min Typical Max Unit Input Voltage V_IN 2.7 - 5.5 V Output Voltage V_OUT - 3.3 - V Output Current I_OUT - 400 - mA Quiescent Current I_Q - 10 - μA Dropout Voltage V_DRO
to-247
Parameter Value Unit Part Number IKW08T120 - Package Type TO-247 - Status Original Stock - VDS (Max Drain-Source Voltage) 120 V ID (Continuous Drain Current) 8 A RDS(on) (On-State Res
TO-3P
Fairchild
Parameter Symbol Min Typical Max Unit Conditions Drain-Source Voltage VDS - - 200 V Gate-Source Voltage VGS -15 - 15 V Continuous Drain Current ID - - 65 A Tc = 25°C Pulse Drain Current
TO-220
Parameter Symbol Min Typical Max Unit Input Voltage VIN 3.0 - 40 V Output Voltage VOUT 1.25 - 37 V Output Current IOUT 1.5 - 1.5 A Line Regulation - 0.01 - %/V Load Regulation - 0.1 -
TO220
STMicroelectronics
18+
Parameter Symbol Conditions Min Typ Max Unit Repetitive Peak Off-State Voltage V DRM T J = 25°C - 600 - V Repetitive Peak Reverse Voltage V RRM T J = 25°C - 600 - V Non-Repetitive Peak Off-
TO-247
Parameter Description Part Number FDA50N50 Type N-Channel MOSFET VDS (Max) 500V VGS (Max) ±20V ID (Max) 50A (Pulsed) / 18A (Continuous) RDS(on) (Max) 0.035Ω @ VGS = 10V Power Dissip
TO-247
Infineon Technologies AG
19+
Parameter Symbol Value Unit Maximum Drain-to-Source Voltage VDS 600 V Continuous Drain Current (Tc = 25°C) ID 34 A Continuous Drain Current (Tc = 100°C) ID 24 A Pulse Drain Current (Tc =
TO-220F
Fairchild
14+
Description: FDPF51N25 is a N-channel MOSFET transistor manufactured by Fairchild Semiconductor. Features: - Low On-Resistance - Low Gate Charge - Fast Switching Speed - RoHS Compliant Applications
to-247
Description: The MJH11021 is a NPN Darlington Transistor in a TO-247 package. It is designed for use in power switching applications. Features: NPN Darlington Transistor TO-247 Package High Curr
to-126
Parameter Symbol Min Typ Max Unit Supply Voltage Vcc 4.5 - 30 V Continuous Collector Current Ic - 1.5 3.0 A Peak Collector Current Icm - - 5.0 A Collector-Emitter Saturation Voltage Vce(s
TO-220
On Semiconductor
Parameter Symbol Min Typical Max Unit Condition Collector-Emitter Voltage VCEO - - -45 V IC = 0, TA = 25°C Emitter-Collector Voltage VEBO - - -5 V IE = 0, TA = 25°C Collector-Base Voltage V
TO-220
On Semiconductor
20+
Parameter Symbol Min Typ Max Unit Collector-Emitter Voltage VCEO - - 100 V Collector-Base Voltage VCBO - - 100 V Emitter-Base Voltage VEBO - - 5 V Collector Current IC - - 1.5 A Base Cu
TO-220
HY
19+
Description: The HY3403P is a three-terminal, high-efficiency, high-current, low-voltage, monolithic integrated circuit designed for use as a step-down (buck) switching regulator. It is capable of de
domestic
to-247TO-247
International Rectifier
Description: The IRGP4750D is an N-channel enhancement mode power MOSFET with a low gate charge and low on-resistance. It is designed for use in high efficiency power supplies, DC-DC converters, and
생산 전문가 중지, 우리는 유지 보수 회사를 용이하게하기 위해 생산이 중단되고 찾기 어려운 많은 전자 부품을 제공 할 수 있습니다
재고
수신자 부담 전화
(888) 766 5577 USA & 캐나다
+52 5515436027
+52 5515436028 멕시코
+49 6931090199 독일
글로벌 결제
글로벌 물류
1.2 Million+ Like Utsource
Required
