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MODULE
Eupec
FZ1200R12KF5 is a module manufactured by EUPEC. It is a 1200V/12KW IGBT module. It is designed for high power applications such as motor drives, welding, traction, and UPS systems. It features a high
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1.6KV VBRCES | 1.2KA IC
MODULE
Mitsubis
00+
Description: The CM600DU-24NFH is a 600V, 24A, IGBT Module from Mitsubishi. Features: High speed switching Low on-state voltage Low power loss High reliability Easy to mount Applications: The C
HIGH POWER SWITCHING USE
MODULE
Eupec
Description: The FF200R17KE3 is an insulated-gate bipolar transistor (IGBT) module manufactured by Eupec. It is a three-phase inverter module with a rated current of 200A and a voltage of 1700V. Feat
IGBT-Modules
MODULE
Others
. The MG100G1AL3 is a power module manufactured by Mitsubishi Electric. It is a 100A, 1200V, IGBT module designed for use in motor drives, UPS systems, and other power conversion applications. It f
Catalog Scans - Shortform Datasheet
MODULE
Semikron
N/A
Description: SKM75GAL123D is a three-phase bridge rectifier module manufactured by Semikron. It is designed for use in power supplies, motor drives and other power electronic applications. Features:
SEMITRANS IGBT Modules New Range
MODULE
Toshiba America Electronic Components
N/A
Parameter Symbol Min Typ Max Unit Description Supply Voltage Vcc 4.5 5.0 5.5 V Operating supply voltage Output Current Iout - 150 - mA Continuous output current Quiescent Current Iq - 2.5 -
TRANSISTOR 150 A, 1200 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor
MODULE
Eupec
00+
Description: The BSM200GB60DLC is an insulated-gate bipolar transistor (IGBT) module from EUPEC. Features: 600V blocking voltage 200A continuous collector current Low switching losses Low gate ch
IGBT Modules up to 600V Dual; Package: AG-34MM-1; IC max: 200.0 A; VCEsat typ: 1.95 V; Configuration: Dual Modules; Technology: IGBT2 Low Loss ; Housing: 34 mm;
MODULE
Semikon
SKM22GD101D is a SEMIKON module. It is a 1200V, 22A, IGBT module with a built-in diode. It is designed for use in motor control, UPS, welding, and other power conversion applications. It features a lo
SEMITRANS IGBT Modules New Range
MODULE
N/A
Description: The MG100G1AL2 is a 100A, 1200V, IGBT module manufactured by Mitsubishi Electric. Features: Low switching loss Low noise High speed switching High reliability Low saturation voltage
From old datasheet system
MODULE
Toshiba America Electronic Components
Description: The MG30J6ES11 is a three-phase brushless motor driver module manufactured by Toshiba America Electronic Components. It is designed to drive three-phase brushless motors with a maximum ou
TRANSISTOR 30 A, 600 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor
MODULE
Toshiba
N/A
Description: Toshiba MG25Q6ES42 is a 25A, 600V, N-channel IGBT module. Feature: Low on-state voltage drop High speed switching Low gate charge Low power loss High surge current capability High r
GTR Module Silicon N Channel IGBT
MODULE
Eupec
Description: The BSM200GA120DLC is a 1200V, 200A IGBT module from EUPEC. Features: - High current rating of 200A - Low switching losses - Low saturation voltage - High power density - High reliabilit
Technische Information / Technical Information
MODULE
Mitsubishi
The CM400DU-12H is a module manufactured by Mitsubishi. It is a power module designed for use in motor control applications. It is a medium voltage module rated for up to 1200V and 400A. It is designe
HIGH POWER SWITCHING USE INSULATED TYPE
MODULE
Mitsubishi
Description: The CM50FL6-12NFH is a Mitsubishi IGBT module designed for high-speed switching applications. It features a high-speed switching IGBT with an integrated fast recovery diode. Features: H
G-3 1/2 Miniature 2 Pin Base
MODULE
Mitsubishi Electric
The MG50J2YS50 is a module manufactured by Mitsubishi Electric. It is a 50A, 600V, three-phase, insulated gate bipolar transistor (IGBT) module. It is designed for use in motor drives, welding machine
50 A, 600 V, N-CHANNEL IGBT
MODULE
Semikron
Description: The SKM200GAR125D is a three-phase IGBT module from Semikron. It has a voltage rating of 1200V and a current rating of 200A. Features: - High blocking voltage of 1200V - Low forward volt
Ultra Fast IGBT Modules
Description: The AGDR-71C is a high-performance, low-cost, single-phase, full-wave bridge rectifier diode. Features: High surge current capability Low forward voltage drop Low reverse leakage curr
MODULE
Eupec
BSM200GA100DN11 is an EUPEC module manufactured by Infineon Technologies. It is a 200A, 1200V, IGBT module with a reverse conducting diode. It is designed for use in motor drives, welding, UPS, solar
High Efficient Rectifier Diodes
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