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MODULE
Infineon Technologies AG
Description: The FS100R17KE3 is a three-phase inverter module from Infineon Technologies. It is designed for use in motor drives and other applications requiring high-power switching. Features: High
EconoPACK?3 1700 V, 100 A sixpack IGBT module with TRENCHSTOP? IGBT3 and NTC.
MODULE
Eupec
N/A
Parameter Description Value Unit Part Number Component Identifier FZ800R12KL4C - Type Component Type IGBT Module - Technology Technology Used Trench Gate Field-Stop (FS) IGBT - Package Pa
IGBT Modules up to 1200V Single; Package: A-IHM130-2; IC max: 800.0 A; VCEsat typ: 2.1 V; Configuration: Single Modules; Technology: IGBT2 Low Loss; Housing: IHM 130 mm;
MODULE
Eupec
Parameter Symbol Test Conditions Min Typ Max Unit Breakdown Voltage V(BR)DSS ID = 250 μA - 1200 - V Forward Voltage VF IF = 2 A, Tj = 25°C - 2.0 - V Reverse Recovery Time trr IF = IR = 2 A,
Technische Information / technical information
MODULE
Eupec
N/A
Parameter Symbol Min Typ Max Unit Conditions Continuous Drain Current ID - 50 - A Tc = 25°C Pulse Drain Current IGM - 120 - A Tc = 25°C, tp = 10 μs Forward Voltage VF 2.2 - 3.0 V IF = 50 A
IGBT Power Module Single switch with chopper diode Including fast free-wheeling diodes Package with insulated metal base plate
MODULE
Hatachi
Parameter Description Min Typ Max Unit Supply Voltage Operating voltage range 2.0 - 5.5 V Output Current Continuous output current - 60 100 mA Peak Current Peak output current (pulsed, 1% d
FR08C
MODULE
Toshiba America Electronic Components
N/A
Description: The MG400Q1US41 is a high-performance insulated gate bipolar transistor (IGBT) module with a rated current of 400A and a voltage rating of 1200V. Features: Low saturation voltage High
TRANSISTOR 400 A, 1200 V, N-CHANNEL IGBT, 2-109A4A, 4 PIN, Insulated Gate BIP Transistor
MODULE
The FS450R12KE3/AGDR-71C is an IGBT module manufactured by Infineon Technologies. It is a three-phase inverter module designed for use in medium-voltage applications. It features a maximum collector e
MODULE
Semikron
N/A
SKM151F is a 3-phase bridge rectifier module manufactured by Semikron. It is a compact, high-performance module with a high surge current capability. It is designed for use in motor drives, UPS system
SEMITRANS IGBT Modules New Range
MODULE
Eupec
07+
FS75R17KE3 is a module made by EUPEC. It is an insulated-gate bipolar transistor (IGBT) module with a voltage rating of 1700V and a current rating of 75A. It is designed for use in motor control, weld
IGBT-Module
MODULE
FSC
FPAB30BH60 is a power module manufactured by Fuji Electric. It is a three-phase bridge rectifier module with a rated current of 30A and a voltage of 600V. The module is designed for use in motor drive
Smart Power ModuleSPM for Front-End Rectifier; Package: SPM27-IA; No of Pins: 27; Container: Rail
MODULE
Others
Description: This is a DRAM module from the Mitsubishi Electric Corporation. It is a 20-pin, 6-bit, 1GB DRAM module. Features: High speed operation Low power consumption High reliab
Catalog Scans - Shortform Datasheet
MODULE
Semikron
12+
Parameter Symbol Min Typ Max Unit Conditions/Notes Collector-Emitter Voltage V CES - - 1200 V Maximum voltage between collector and emitter with the gate open Gate-Emitter Voltage V GES -15 -
MODULE
N/A
Parameter Description Value Unit Device Full Name MG600Q1US41 - Type Description MOSFET - VDS (Max) Drain-Source Voltage 600 V RDS(on) (Max) On-State Resistance 41 mΩ ID (Max) Continuou
Triac; Thyristor Type:Snubberless; Peak Repetitive Off-State Voltage, Vdrm:600V; On State RMS Current, ITrms:12A; Gate Trigger Current QI, Igt:35mA; Current, It av:12A; Gate Trigger Current Max, Igt:35mA RoHS Compliant: Yes
MODULE
Eupec
N/A
Description: The BSM25GD120D2 is an insulated-gate bipolar transistor (IGBT) module from Eupec. It is a three-phase inverter module with a maximum output current of 120A. Features: Low switching l
IGBT Power Module Power module 3-phase full-bridge Including fast free-wheel diodes
MODULE
Toshiba America Electronic Components
N/A
Parameter Symbol Min Typ Max Unit Conditions Supply Voltage Vcc 4.5 5 5.5 V Output Current Iout - 200 - mA Continuous Peak Output Current Ipeak - 300 - mA Pulse Width 10 ms Dropout Volt
TRANSISTOR 200 A, 550 V, NPN, Si, POWER TRANSISTOR, 2-68D1A, 3 PIN, BIP General Purpose Power
MODULE
Semikron
Parameter Symbol Min Typ Max Unit Description Collector-Emitter Voltage V CES 1200 V Maximum repetitive peak reverse voltage Emitter-Collector Voltage V ECS -5 V Maximum reverse voltage
Trench IGBT Modules
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