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TSSOP
STMicroelectronics
09+PB
Description: 8Mbit, 3V, 70ns, Uniform Sector Flash Memory Features: - 8Mbit capacity - 3V operation - 70ns access time - Uniform Sector architecture - Embedded Algorithms - High Reliability - Low Powe
IC FLASH 8M PARALLEL 48TSOP
TSOP32
Atmel
05+
Description: The AT29C040A-12TC is a 4 Mbit (512 K × 8-bit) CMOS Electrically Erasable Programmable Read-Only Memory (EEPROM) organized as 524,288 words by 8 bits. Features: - Fast access time: 70 ns
IC FLASH 4M PARALLEL 32TSOP
DIP32
STMicroelectronics
(DIP32,ST) Description: The M27C4001-12F6 is a 4Mbit (512K x 8) UV EPROM and OTP EPROM, organized as 512K x 8 bits. It is manufactured using STMicroelectronics' advanced non-volatile CMOS technology
IC EPROM 4M PARALLEL 32CDIP
CDIP32
Microchip Technology
Parameter Symbol Conditions Min Typ Max Unit Supply Voltage Vcc Operating 4.5 5 5.5 V Standby Current Icc Vcc = 5V - 1 5 μA Active Current Icc Vcc = 5V, Reading - 20 30 mA Output High Lev
8-Megabit 1M x 8 UV Erasable CMOS EPROM
CDIP-40
STMicroelectronics
0521+
Description: The M27C4002 is a 4 Mbit (512 K x 8) UV EPROM and OTP EPROM, which is organized as 512 K words of 8 bits each. Features: - Fast access time: 70 ns - Low power consumption - High reliabil
4 MBIT 256KB X16 UV EPROM AND OTP ROM
TSSOP
Ramtron
1207+
Description: FM28V100-TG is a nonvolatile ferroelectric random access memory (FRAM) from RAMTRON. It is a 1Mb FRAM device with a 3.3V supply voltage and a 32-pin TSSOP package. Features: Low power
IC FRAM 1M PARALLEL 32TSOP I
SOP
Parameter Description Value Device Type Serial Flash Memory AT27C512R-70RU Memory Density Size of Memory 512 Kbit Organization Memory Organization 64K x 8 Vcc (Supply Voltage) Operating S
PLCC
Winbond
Description: W29C020CP90B is a 2-megabit (256K x 8) CMOS Flash memory device manufactured by Winbond. Features: - Low voltage operation: 2.7V to 3.6V - Fast access time: 90ns - Low power consumption
IC FLASH 2M PARALLEL 32PLCC
TSOP48
ISSI
22+
Parameter Description Value Device Type High-Speed CMOS SRAM 2M x 16 Package Type TQFP (Thin Quad Flat Package) 44-Pin Supply Voltage (Vcc) Operating Voltage Range 3.3V ± 0.3V Operating T
EDIP28
Maxim Integrated
05+
The DS1230Y-85 is a nonvolatile SRAM memory component manufactured by Maxim Integrated. It is a 28-pin EDIP package and is available in a wide range of densities from 64Kb to 1Mb. The DS1230Y-85 feat
IC NVSRAM 256K PARALLEL 28EDIP
EDIP28
Dallas
05+
Description: The DS1245Y-100 is a nonvolatile SRAM memory manufactured by Dallas Semiconductor. It is a 32K x 8 bit static RAM that is organized as 4096 words by 8 bits. Features: - Low power CMOS te
IC NVSRAM 1M PARALLEL 32EDIP
DIP
Sharp
00+
Description: The LH5116-10 is a static RAM manufactured by Sharp. It is a 16K x 8 bit CMOS RAM, which is organized as 2,097,152 bits. Features: Low power consumption High speed access time Low vol
IC SRAM 16K PARALLEL 24DIP
01+
Dallas
DIP
DALLAS) Description: The DS1230Y-200 (01+, DALLAS) is a non-volatile SRAM memory module from Dallas Semiconductor. It is a 32K x 8 SRAM with a battery-backed, low-power CMOS design. The module has a
IC NVSRAM 256K PARALLEL 28EDIP
DIP
Atmel
09+
Description: The AT25256A-10PU-2.7 is a 256Kbit serial EEPROM from Atmel. It is a non-volatile memory that uses a two-wire serial interface to communicate with a host device. Features: -256Kbit of me
IC EEPROM 256K SPI 20MHZ 8DIP
TSOP
ISSI
Description: IS61WV20488BLL-10TLI is a 4Mbit (512K x 8) Static RAM manufactured by ISSI. It is a low power CMOS device with a fast access time of 10ns. Features: * Fast access time of 10ns * Low powe
IC SRAM 16M PARALLEL 44TSOP II
BGA48
ISSI
Parameter Description Value Device Type 2M x 16 SRAM with 3.3V VCCQ I/O and 2.5V VCC I/O - Package 44-Pin TQFP (7x7) - Operating Voltage (VCC) Core Supply Voltage 2.5V ± 0.2V Operating Vo
SOP-8
Atmel
0348+
Description: AT25640AN-10SI-2.7 is an 8-pin SOP (Small Outline Package) nonvolatile memory device manufactured by Atmel. Features: - Low-voltage and standard-voltage operation - Low power consumptio
IC EEPROM 64K SPI 20MHZ 8SOIC
TSOP48
Micron Technology
Parameter Description Value Unit Device Device Name M29W064FB70N3E - Technology Flash Memory Technology CMOS - Memory Density Total Memory 8 M x 8 bits Vcc (Operating Voltage) Supply Volt
PLCC
Microchip Technology
9228+
Description: The AT28C64-15JI is a 8K x 8-bit nonvolatile Electrically Erasable Programmable Read-Only Memory (EEPROM) manufactured by Microchip Technology. Features: 8K x 8-bit nonvolatile memory
IC EEPROM 64K PARALLEL 32PLCC
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