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Utsource
China
2020
Parameter/Feature Description Model TP4056 Input Voltage Range 4.5V to 5.5V (Typically 5V) Charging Current 1A (Adjustable, typically set at 1A) Battery Type Lithium-ion (Li-ion) or Lithi
TO-247
International Rectifier
Parameter Description Value Unit Part Number Full Part Number IRG7PH35UD1-E - Package Type Encapsulation TO-247 - Absolute Maximum Ratings - - - VDSS Drain-to-Source Voltage 700 V VGSS
MODULE
Mitsubish
11+
Description: The CM50MX-24A is a Mitsubishi power module designed for use in a wide range of applications. It is a high-performance, high-efficiency module that can be used in a variety of application
MODULE
Infineon Technologies AG
2016+
Parameter Symbol Min Typ Max Unit Description Blocking Voltage V_RR 700 V Repetitive Peak Reverse Voltage Continuous Current I_C 300 A RMS Value of Fundamental Frequency Total Loss P_TO
MODULE
Infineon Technologies AG
12+PB
The BSM150GT120DN2 is an insulated-gate bipolar transistor (IGBT) module from Infineon Technologies. It is a 1200V, 150A device designed for use in motor control, UPS, and solar inverter applications.
MODULE
Semikron
12+
Parameter Symbol Min Typ Max Unit Notes Supply Voltage VDD -0.3 - 5.5 V Absolute maximum ratings Output Current IO - 24 28 A Continuous output current at TA = 25°C Pulse Output Current IOP
Module
Mitsubishi
18+
The CM150RX1-12A is a module manufactured by Mitsubishi. It is a power module designed for use in motor drives and inverters. It is a single-phase bridge rectifier module with a maximum current rating
IGBT
Infineon Technologies AG
22+
Parameter Symbol Value Unit Conditions/Notes Rated Voltage VRRM 1200 V Maximum repetitive peak reverse voltage Rated Current ITAV 300 A RMS value of the fundamental frequency Forward Voltag
H2M
Mitsubishi
2018+
Description: The RA60H1317M1A-201 is a power amplifier module from Mitsubishi. It is a high-power amplifier module with a rated output power of 60W. Features: High output power of 60W High effi
Silicon RF Devices RF High Power MOS FET Modules RA60H1317M1A Remarks RoHS : Restriction of the use of certain Hazardous Substances in Electrical and Electronic Equipment
MODULE
Fuji Electric
15+
Parameter Symbol Min Typ Max Unit Notes Forward Voltage (at IF = 20 A) VF - 1.7 2.0 V @ Tj = 25°C Reverse Recovery Time (at IRM = 20 A, dI/dt = 200 A/μs) trr - 130 180 ns @ Tj = 25°C Peak R
MODULE
Mitsubishi
07
Parameter Description Value Unit Device Type High-Efficiency, Low-EMI Synchronous Buck Converter PS21965-4C - Input Voltage Range Minimum input voltage to maximum input voltage 4.5 to 28 V
MODULE
Infineon Technologies AG
19+
Description: Infineon FP10R12W1T4 is a three-phase inverter module with integrated IGBTs and freewheeling diodes. Features: Low inductance design Low switching losses Low EMI High power density
MODULE
Niec
15+
Parameter Description Value Part Number Unique identifier for the component PD100KN16 Type Category of the device Power Diode Maximum Reverse Voltage (Vr) Max voltage across diode in revers
MODULE
Infineon Technologies AG
19+
This is a three-phase inverter module made by Infineon. It is designed to be used in motor control applications, such as electric vehicles and industrial drives. Features: Maximum current rating
MODULE
Motorola
02+
Parameter Description Value Part Number Full part number MHW2821-1 Type Type of component MOSFET Package Package type TO-252 (DPAK) Polarity Polarity N-Channel VDS Drain-to-Source Volta
TO-247
IXYS
Parameter DSEI30-06A / DSE130-06A 30A/600V Maximum RMS Current 30 A Peak Non-Repetitive Surge Current (Ism) 240 A (8.3 ms, sine half-wave) Maximum Repetitive Peak Reverse Voltage (Vrrm) 600
MODULE
Semikron
18+
Parameter Symbol Conditions Min Typ Max Unit Supply Voltage Vcc 4.5 5 5.5 V Output Current Iout Continuous - 100 200 mA Peak Output Current Ioutp Pulse - 300 500 mA Operating Temperature
专营模块
Semikron
08+
Parameter Symbol Conditions Min Typ Max Unit Forward Voltage VF IF = 20mA 1.8 2.2 V Reverse Current IR VR = 5V 100 nA Peak Forward Current IF(surge) tp = 1s 30 mA Operating Temperatu
MODULE
Infineon Technologies AG
18+
Below is the parameter table and instructions for the 2ED300C17-ST, a Silicon Carbide (SiC) MOSFET from Infineon Technologies. 2ED300C17-ST Parameter Table Parameter Symbol Min Typ Max Unit Test Co
MODULE
Infineon Technologies AG
19+
Description: This is a three-phase inverter module from Infineon. It is designed to be used in applications such as motor drives, solar inverters, and UPS systems. Features: Three-phase inverter m
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