Utsource 사이트에 들어가려면 여기를 클릭하세요
Dear customers, due to the implementation of the GDPR policy in Europe, UTSOURCE has also made adjustment accordingly to meet the policy requirements. Please read the new privacy policy carefully and this window will no longer pop up after you accept it.
Delivery Address
+ 주소추가
새로운화물운송주소
* 추적 정보를 제때받을 수 있도록 휴대폰 번호를 정확하게 입력하십시오.
국가 코드
Utsource
MODULE
Semikron
12+
SKM100GB12V is a module manufactured by Semikron. It is a three-phase bridge rectifier module with a voltage rating of 1200V and a current rating of 100A. It is designed for use in motor drives, weldi
Target Data
MODULE
Eupec
N/A
Parameter Symbol Min Typ Max Unit Conditions Collector-Emitter Voltage V CESM - - 1200 V Emitter-Collector Voltage V CES - - 1200 V Gate-Emitter Voltage V GES - - ±20 V Continuous Coll
IGBT Power Module
MODULE
Semikron
N/A
Description: SKM100GA121D is a 1200V, 100A, 3-phase IGBT module from Semikron. Features: 1200V blocking voltage 100A continuous current Low inductance design Low thermal resistance
SEMITRANS IGBT Modules New Range
MODULE
Infineon Technologies AG
This is a three-phase inverter module made by Infineon. It is designed to be used in motor control applications, such as electric vehicles and industrial drives. Features: Maximum current rating
EasyPIM? module with fast Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and NTC
MODULE
Infineon Technologies AG
Description: Infineon IGBT Power Module Features: Low conduction and switching losses High current capability Low gate charge Short circuit withstand time Low inductance Low noise em
EconoPIM2 module with Trench/Fieldstop IGBT4 and EmCon4 diode
MODULE
Eupec
06+
Parameter Symbol Min Typical Max Unit Notes Rated Collector-Emitter Voltage VCE - 1700 - V Rated Gate-Emitter Voltage (Absolute Maximum) VGE(max) - 20 - V Continuous Collector Current (Tc
EconoDUAL3 module with trench/fieldstop IGBT4 and Emitter Controlled 3 diode
MODULE
Mitsubishi
08+
The CM150TJA-12F is a module manufactured by Mitsubishi. It is a high-power insulated gate bipolar transistor (IGBT) module designed for use in inverter circuits. It has a maximum collector-emitter vo
MODULE
MG100J6ES40 is a power module manufactured by Mitsubishi Electric. It is a 6-pack IGBT module with a rated current of 100A and a voltage rating of 600V. It is designed for use in motor control, weldin
MODULE
Infineon Technologies AG
13+
Infineon IGBT Module Features: 1200V blocking voltage 100A collector current Low switching losses Low noise emission Short circuit capability High speed switching Low inductance
EconoPIM3 module with trench/fieldstop IGBT4 and EmCon4 diode
MODULE
Eupec
06+
Description: The FS10R06VL4-B2 is an insulated-gate bipolar transistor (IGBT) module from EUPEC. It is a high-voltage and high-speed switching device with a maximum collector-emitter voltage of 600V a
MODULE
Eupec
08+
BSM200GA120DN2SE3256 is an insulated gate bipolar transistor (IGBT) module manufactured by EUPEC. It is a three-phase inverter module with a rated current of 200A and a voltage of 1200V. The module is
MODULE
Eupec
;13+
Description: EUPEC Module Features: Low switching losses High current capability Low gate charge Low leakage current Soft switching capability High frequency operation
IGBT-Wechselrichter / IGBT-inverter
MODULE
Infineo
Description: Infineon IGBT Module Features: Low switching losses High speed switching Low noise High current capability Low on-state resistance High surge current capability Application: Th
EconoPACK3 with fast trench/fieldstop IGBT and EmCon3 diode
MODULE
Infineon Technologies AG
NA
Description: The FP15R12W1T4_B3 is an insulated-gate bipolar transistor (IGBT) module from Infineon Technologies. It is a three-phase, full-bridge, soft-switching IGBT module with a maximum collector-
EasyPIM? module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and NTC
MODULE
Parameter Description Value Part Number Full part number of the device MG75H2DL1 Type Type of component MOSFET VDS (Max) Maximum Drain-to-Source Voltage ±75V RDS(on) @ VGS On-State Resist
MODULE
N/A
Parameter Symbol Min Typ Max Unit Supply Voltage Vcc 4.5 5.0 5.5 V Operating Temperature Toper -40 85 °C Storage Temperature Tstg -65 150 °C Output Current (Max) Iout 150 mA Quiesce
TOSHIBA GTR Module Silicon N Channel IGBT
MODULE
Infineon Technologies AG
Description: Infineon FP75R12KT4_B15 is a three-phase insulated gate bipolar transistor (IGBT) module. Features: 1200V blocking voltage 75A collector current Low switching losses Soft tur
MODULE
Fairchild
13+
Description: The FPDB30PH60 is a 600V, 30A, ultrafast, soft-recovery, dual-diode module from Fairchild Semiconductor. Features: Low forward voltage drop High surge capability Low reverse recovery
Smart Power Module for Front-End Rectifier
MODULE
Toshiba America Electronic Components
N/A
Parameter Description Value Unit Part Number Device Identifier MG25J2YS40 - Type Device Type MOSFET - Configuration Channel Type N-Channel - Package Housing Style TO-252 - Drain-Source
TRANSISTOR 25 A, 600 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor
생산 전문가 중지, 우리는 유지 보수 회사를 용이하게하기 위해 생산이 중단되고 찾기 어려운 많은 전자 부품을 제공 할 수 있습니다
재고
수신자 부담 전화
(888) 766 5577 USA & 캐나다
+52 5515436027
+52 5515436028 멕시코
+49 6931090199 독일
글로벌 결제
글로벌 물류
1 Million+ Like Utsource
Required
