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MODULE
Eupec
The DD350N18K is an insulated-gate bipolar transistor (IGBT) module from EUPEC. It is a high-power semiconductor device that combines the benefits of both bipolar and field-effect transistors. The mod
DIP4
SEP
Description: GBJ2510 is a high power bridge rectifier with a forward voltage drop of 1.1V and a reverse voltage of 1000V. Features: - High surge current capability - Low forward voltage drop - High t
MODULE
Semikron
SKDH115/16 is a three-phase diode module manufactured by Semikron. It is designed for use in power electronics applications such as motor drives, UPS systems, and solar inverters. The module has a max
Half Controlled 3-phase Bridge Rectifier
DIP4
SEP
17+
Parameter Symbol Min Typ Max Unit Description Input Voltage VIN 2.7 - 5.5 V Operating input voltage range Output Voltage VOUT - 3.3 - V Regulated output voltage Quiescent Current IQ - 60 -
KBL-4
SEP
Parameter Value Unit Maximum Repetitive Peak Reverse Voltage (VRRM) 1000 V Maximum RMS Voltage (VRMS) 707 V Maximum Average Rectified Output Current (IOAV) 10 A Peak Surge Current Non-rep
SOP-4
Parameter Value Unit Part Number MB10S - Package SOP-4 - Maximum Repetitive Peak Reverse Voltage (VRRM) 1000 V Maximum RMS Voltage (VRMS) 707 V Maximum DC Blocking Voltage (VDC) 1000 V
Bridge pile
MODULE
Liujing
18+
SKKH330/12E is a 12 Amp, 330 Volt, 3-Phase, Diode Module manufactured by Semikron. It is a three-phase diode module with a high current capacity of 12A and a high voltage rating of 330V. It is designe
MADE IN CHINA
DIP4
SEP
Parameter Value Unit Maximum Current 25 A Maximum Voltage 1000 V Package Type TO-220 - Operating Temperature -40 to 150 °C Instructions for KBU2510 25A 1000V Handling and Storage: St
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