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국가 코드H2M
Mitsubishi
2018+
Parameter RA80H1415M1 RA80H1415M1-501 Type Resistor Array Resistor Array Resistance (Ω) 10k 10k Tolerance (%) ±1 ±1 Power Rating (W) 0.25 0.25 Number of Resistors 4 4 Package Type SIP
Silicon RF Devices RF High Power MOS FET Modules RA80H1415M1 Remarks RoHS : Restriction of the use of certain Hazardous Substances in Electrical and Electronic Equipment
HPM
Mitsubishi
18+
Parameter Description Value Unit Input Voltage Maximum input voltage the device can handle 40 V Continuous Current Maximum continuous current 3.5 A Peak Current Maximum peak current 7 A P
H2M
Mitsubishi
2018+
Silicon RF Devices RF High Power MOS FET Modules RA30H3847M1 Remarks RoHS : Restriction of the use of certain Hazardous Substances in Electrical and Electronic Equipment
TO-272
Freescale
07+,06+
Parameter MRF6S21140HR3 MRF6S21140H Type RF Power Transistor RF Power Transistor Package Type Plastic Package Plastic Package Frequency Range 1.8 to 2.2 GHz 1.8 to 2.2 GHz Pulsed Output P
SMD
Mitsubishi
16+
Parameter Description Value Unit Part Number Component Identifier RA45H7687M1 - Package Physical Package Type LQFP-100 - Operating Voltage (Vdd) Supply Voltage Range 1.62 to 3.63 V Operat
The RA45H7687M1 is a 45-watt RF MOSFET Amplifier Module for 12.8-volt mobile radios that operate in the 764- to 870-MHz range
SMD
Mitsubishi
17+
Parameter RD07MUS2B RD07MUS2B-T212 Type MOSFET MOSFET Package SOT-23 SOT-23 VDS (Max Drain-Source Voltage) 60 V 60 V RDS(on) (Typical On-Resistance at VGS=10V) 45 mΩ @ 25°C 45 mΩ @ 25°C
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