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US $57.54560
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국가 코드ni-780s
Freescale
09+
MRF7S21210HS 2110 - 2170 MHz, 63 W AVG., 28 V [RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
SMD
Fujitsu
08+
L-Band Medium & High Power GaAs FET.The FLU35XM is a GaAs FET designed for base station applications in thePCN/PCS frequency range
TO-272
Freescale
11+
1805- 1990 MHz, 100 W, 28 VGSM/GSM EDGELATERAL N - CHANNELRF POWER MOSFETs
SMD
Freescale
11+
Parameter Description Part Number MRF9030GN Type RF Power MOSFET Package Type TO-247 Pulsed Drain Current (IDM) 150A Peak at TC = 25°C, Pulse Width ≤ 10μs, Duty Cycle ≤ 0.1% Continuous
TO-272
Freescale
09+,07+
RF LDMOS Wideband IntegratedPower Amplifiers 1805-1990MHZ 15W 26V for cellular applications: GSM, GSM EDGE, PHS,TDMA, CDMA, W - CDMA and TD - SCDMA
SMD
Mitsubishi
16+
RA60H1317M1 is a Mitsubishi RF power transistor module designed for use in radio communication equipment. It is a high-power, high-efficiency, high-frequency device that is capable of operating in the
The RA60H1317M1A is a 60-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 136- to 174-MHz range.
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