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Utsource
1210-4.5A
KOA
05+
Description: 1210-4.5A, KOA Features: * High current rating of 4.5A * High temperature operation up to 125°C * Low profile of 0.6mm * RoHS compliant Applications: * Automotive electronics * Industri
Micro FUSE
SOT-23/SC-59
Panjit
Manufacturer: PANJIT Package: SOT-23/SC-59 Description: MMBD352_R1_00001 is a dual small signal diode manufactured by PANJIT. It is packaged in a SOT-23/SC-59 package. Features: Low forward voltage
SOT-23
KEC
08+NOPB
The KIA431BS is a three-terminal adjustable shunt voltage regulator manufactured by KEC. It is housed in a SOT-23 package and features a low output voltage of 1.2V and a maximum output current of 500m
KIA431BS Voltage Reference Power Management IC 2.495V~36V SOT-23 marking 43B BIPOLAR LINEAR INTEGRATED CIRCUIT
SOT-89
NEC
05+
Package: SOT-89 Manufacturer: NEC Description: HE1A4A is a 4-pin SOT-89 package device manufactured by NEC. Features: Low on-resistance Low power consumption High speed switching High reliabilit
HE1A4A Bias Resistor NPN 60V 2A R2=10KΩ sot89 MARKING GA
TO-252
WG
18+
Parameter Symbol Min Typ Max Unit Description Drain-Source Voltage VDS 60 V Maximum drain-source voltage Gate-Source Voltage VGS -15 15 V Maximum gate-source voltage Continuous Drain Cur
TO247
International Rectifier
15+
Description: The IRG4PH50U is an insulated gate bipolar transistor (IGBT) module with a maximum collector-emitter voltage of 600V and a maximum collector current of 50A. Features: Low saturation vol
SOD-123FL
WG
18+
Parameter Description Part Number F1M Type Fuse Rated Voltage 250V AC Rated Current 1A Breaking Capacity 35A at 250V AC Response Time Fast acting Dimensions 5x20mm Operating Tempe
TO-252-2(DPAK)
STMicroelectronics
Description: The STMicroelectronics ACST410-8BTR is a dual N-channel enhancement mode power field effect transistor (FET) in a plastic package using TrenchMOS technology. It is designed for use in low
TO-247
International Rectifier
Parameter Symbol Min Typical Max Unit Test Conditions Drain-Source Voltage VDS - 200 - V Gate-Source Voltage VGS -20 0 15 V Continuous Drain Current ID (DC) - 9.0 - A TC = 25°C, VGS = 10V
TO-126
STMicroelectronics
Description: The 2SD882 is a silicon NPN power transistor designed for use in audio and general purpose applications. Features: High DC current gain Low collector-emitter saturation voltage Low c
TO-247
Vishay Siliconix
13+
Parameter Symbol Value Unit Rated Current IR 60 A Maximum Voltage VMAX 3 V Operating Temperature Toper -40 to +85 °C Case Type APH03 Mounting Type Surface Mount Instructions for
SOD-323/Mini2-f1/0805
Panasonic
05+
DB21413 Fast Recovery Diodes 40V 2A 0.53V/530mV 12nS SOD-323/Mini2-f1 marking 4N low forward voltageVF
TO-247
Vishay Siliconix
13+
Parameter Description Value Part Number Unique identifier for the component VS-60APH03 Type Type of device Power Module Input Voltage Range of input voltage the device can handle 18V to 72V
SMC(DO-214AB)
STMicroelectronics
The STPS5L60S is a 5A, 600V, ultrafast, soft-recovery, dual-channel, surface-mount, ultrafast diode from STMicroelectronics. It is designed to protect sensitive electronic equipment from voltage trans
1808-5A
SOC
05+
SSFC5A is a 5A surface-mount Schottky rectifier diode manufactured by Vishay. It is a low-voltage, low-power, and low-profile device. The device has an ultra-low forward voltage drop of 0.3V and a rev
fast-acting fuse SSFC5A 5A 125V 1808-5A marking 5A
TO-252-2(DPAK)
STMicroelectronics
Parameter Symbol Min Typ Max Unit Breakdown Voltage (Collector-Emitter) BVCEX - 650 - V Continuous Collector Current ICC - 7 - A Pulsed Collector Current ICM - 14 - A Total Power Dissipat
VFSOP8/US8
Texas
03+
Description: The SN74LVC3G04DCU3 is a single inverter gate from Texas Instruments. It is a low-voltage CMOS device that is designed for 1.65 V to 3.6 V VCC operation. Features: Low-Voltage Operation
Integrated Circuit(IC) inverter SN74LVC3G04DCU3 VFSOP8/US8 marking 04CZ
TO-247
Infineon Technologies AG
16+
Parameter Symbol IKW08T120 / K08T120 Unit Collector-Emitter Voltage V CES 1200 V Collector Current I C 8 A Gate-Emitter Voltage V GE ±20 V Power Dissipation P T 130 W Junction Temperatu
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