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첫페이지 > 전자 부품 > 트랜지스터 > 바이폴라 트랜지스터
TO-220
International Rectifier
18+
Description: N-Channel Power MOSFET Features: Low On-Resistance Fast Switching Low Gate Charge Low Input Capacitance 100% Avalanche Tested RoHS Compliant Applications: DC-DC Conve
PDFN5X6
Niko-Sem
Parameter Symbol Min Typical Max Unit Drain-Source Voltage VDS - - 30 V Gate-Source Voltage VGS -12 - 12 V Continuous Drain Current (Tc=25°C) ID - 70 - A Continuous Drain Current (Tc=100°
TO-252
STMicroelectronics
12+15+
Parameter Symbol Value Unit Collector-Emitter Voltage VCEO 650 V Collector-Base Voltage VCBO 700 V Emitter-Base Voltage VEBO 7 V Continuous Collector Current IC 11 A Continuous Collecto
TO-220F
KEC
18+
Parameter Value Unit Type Zener Diode - Maximum Repetitive Peak Reverse Voltage (V_RRM) 600 V Zener Voltage (V_Z) 13V, 15V, 18V, 24V V Zener Tolerance (ΔV_Z) ±5% % Maximum Zener Current
TO-220
Vishay Siliconix
18+19+
Description: The IRF520PBF is a single N-channel enhancement mode power MOSFET. It is designed to withstand high energy in the avalanche and commutation modes. Features: Low On-Resistance Fast
TO-220F
TSC
14+
Parameter Value Unit Device Type Schottky Rectifier Maximum Repetitive Peak Reverse Voltage (VRRM) 200 V Maximum Average Forward Rectified Current (IF(AV)) 20 A Peak Forward Surge Curren
TO-3P
IXYS
Parameter Value Unit Maximum Drain Current (IDM) 69 A Maximum Drain-Source Voltage (VDS) 300 V Maximum Gate-Source Voltage (VGS) ±20 V Continuous Drain Current (ID) at 25°C 41.4 A Conti
TO220F
09+
Description: 2SD2241 is a NPN silicon power transistor with a maximum collector current of 5A and a maximum collector-emitter voltage of 80V. Features: High current gain Low collector-emitter
TO-3PP
Parameter Description Part Number FGA25N135ANDTU Brand New Original Goods Stock Status In Stock Package Type TO-3P Type N-Channel MOSFET Drain-Source Voltage (Vds) 1350V Continuous
TO-220F
Alpha & Omega Semiconductor
18+
Parameter Description Value Unit Part Number Full part number TF29S50 - Type Device type MOSFET - Configuration Channel configuration N-Channel - VDS (Max) Drain-source voltage 50 V RDS
TO126F
12+
Parameter Symbol Min Typ Max Unit Description Collector-Emitter Voltage VCEO - - 80 V Maximum voltage between collector and emitter with base open. Base-Emitter Voltage VBE - - 6.5 V Maximum
TO-3P
Fairchild
Parameter Symbol Min Typical Max Unit Collector-Emitter Voltage VCEO - 250 - V Collector-Base Voltage VCBO - 250 - V Emitter-Base Voltage VEBO - 7 - V Continuous Collector Current IC - 10
TO-220F
Alpha&omega
13+
Parameter Value Description Part Number AOTF10N90 - Type N-Channel MOSFET - VDS (Max) 100V Maximum Drain-to-Source Voltage VGS (Max) ±20V Maximum Gate-to-Source Voltage RDS(on) (Typical
TO-247
Shindengen
06+
Parameter Symbol Min Typ Max Unit Drain-Source Voltage VDS -500 - -1000 V Gate-Source Voltage VGS -20 - +20 V Continuous Drain Current ID - 8 15 A Pulse Drain Current IDP - 30 - A Power
TO-92
WS
Parameter Description Value Part Number Component Identifier 78L12 WS Package Type Physical Package TO-92 Output Voltage (Vout) Regulated Output Voltage 12 V Input Voltage Range (Vin) Ope
TO-220F
STMicroelectronics
14+
Parameter Symbol Min Typ Max Unit Description Drain-Source Voltage VDS - 500 - V Maximum voltage that can be applied between the drain and source terminals with the gate open. Gate-Source Vol
TO-220F
Parameter Value Unit Type N-Channel MOSFET - Part Number 2SK2700 - Drain Source Voltage (Vds) 500 V Gate Source Voltage (Vgs) ±20 V Continuous Drain Current (Id) 14 A Pulse Drain Curr
TO-92
PH
Parameter Symbol Min Typical Max Unit Collector-Emitter Voltage VCEO - 50 - V Collector-Base Voltage VCBO - 60 - V Emitter-Base Voltage VEBO - 5 - V Collector Current IC - 100 - mA Base
TO-220
International Rectifier
Parameter Symbol Min Typ Max Unit Conditions Drain-Source On-Resistance RDS(on) - 0.017 - Ω VGS = 10V, ID = 47A Gate-Source Threshold Voltage VGS(th) 1.0 - 2.0 V ID = 250μA Continuous Drain
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