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MODULE
Semikron
12+
SKM100GB12V is a module manufactured by Semikron. It is a three-phase bridge rectifier module with a voltage rating of 1200V and a current rating of 100A. It is designed for use in motor drives, weldi
Target Data
MODULE
Eupec
N/A
Parameter Symbol Min Typ Max Unit Conditions Collector-Emitter Voltage V CESM - - 1200 V Emitter-Collector Voltage V CES - - 1200 V Gate-Emitter Voltage V GES - - ±20 V Continuous Coll
IGBT Power Module
MODULE
Semikron
N/A
Description: SKM100GA121D is a 1200V, 100A, 3-phase IGBT module from Semikron. Features: 1200V blocking voltage 100A continuous current Low inductance design Low thermal resistance
SEMITRANS IGBT Modules New Range
MODULE
Infineon Technologies AG
This is a three-phase inverter module made by Infineon. It is designed to be used in motor control applications, such as electric vehicles and industrial drives. Features: Maximum current rating
EasyPIM? module with fast Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and NTC
MODULE
Infineon Technologies AG
Description: Infineon IGBT Power Module Features: Low conduction and switching losses High current capability Low gate charge Short circuit withstand time Low inductance Low noise em
EconoPIM2 module with Trench/Fieldstop IGBT4 and EmCon4 diode
MODULE
Eupec
06+
Parameter Symbol Min Typical Max Unit Notes Rated Collector-Emitter Voltage VCE - 1700 - V Rated Gate-Emitter Voltage (Absolute Maximum) VGE(max) - 20 - V Continuous Collector Current (Tc
EconoDUAL3 module with trench/fieldstop IGBT4 and Emitter Controlled 3 diode
MODULE
Mitsubishi
08+
The CM150TJA-12F is a module manufactured by Mitsubishi. It is a high-power insulated gate bipolar transistor (IGBT) module designed for use in inverter circuits. It has a maximum collector-emitter vo
MODULE
MG100J6ES40 is a power module manufactured by Mitsubishi Electric. It is a 6-pack IGBT module with a rated current of 100A and a voltage rating of 600V. It is designed for use in motor control, weldin
MODULE
Infineon Technologies AG
13+
Infineon IGBT Module Features: 1200V blocking voltage 100A collector current Low switching losses Low noise emission Short circuit capability High speed switching Low inductance
EconoPIM3 module with trench/fieldstop IGBT4 and EmCon4 diode
MODULE
Eupec
06+
Description: The FS10R06VL4-B2 is an insulated-gate bipolar transistor (IGBT) module from EUPEC. It is a high-voltage and high-speed switching device with a maximum collector-emitter voltage of 600V a
MODULE
Eupec
08+
BSM200GA120DN2SE3256 is an insulated gate bipolar transistor (IGBT) module manufactured by EUPEC. It is a three-phase inverter module with a rated current of 200A and a voltage of 1200V. The module is
MODULE
Eupec
;13+
Description: EUPEC Module Features: Low switching losses High current capability Low gate charge Low leakage current Soft switching capability High frequency operation
IGBT-Wechselrichter / IGBT-inverter
MODULE
Infineo
Description: Infineon IGBT Module Features: Low switching losses High speed switching Low noise High current capability Low on-state resistance High surge current capability Application: Th
EconoPACK3 with fast trench/fieldstop IGBT and EmCon3 diode
MODULE
Infineon Technologies AG
NA
Description: The FP15R12W1T4_B3 is an insulated-gate bipolar transistor (IGBT) module from Infineon Technologies. It is a three-phase, full-bridge, soft-switching IGBT module with a maximum collector-
EasyPIM? module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and NTC
MODULE
Parameter Description Value Part Number Full part number of the device MG75H2DL1 Type Type of component MOSFET VDS (Max) Maximum Drain-to-Source Voltage ±75V RDS(on) @ VGS On-State Resist
MODULE
N/A
Parameter Symbol Min Typ Max Unit Supply Voltage Vcc 4.5 5.0 5.5 V Operating Temperature Toper -40 85 °C Storage Temperature Tstg -65 150 °C Output Current (Max) Iout 150 mA Quiesce
TOSHIBA GTR Module Silicon N Channel IGBT
MODULE
Infineon Technologies AG
Description: Infineon FP75R12KT4_B15 is a three-phase insulated gate bipolar transistor (IGBT) module. Features: 1200V blocking voltage 75A collector current Low switching losses Soft tur
MODULE
Fairchild
13+
Description: The FPDB30PH60 is a 600V, 30A, ultrafast, soft-recovery, dual-diode module from Fairchild Semiconductor. Features: Low forward voltage drop High surge capability Low reverse recovery
Smart Power Module for Front-End Rectifier
MODULE
Toshiba America Electronic Components
N/A
Parameter Description Value Unit Part Number Device Identifier MG25J2YS40 - Type Device Type MOSFET - Configuration Channel Type N-Channel - Package Housing Style TO-252 - Drain-Source
TRANSISTOR 25 A, 600 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor
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