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LändercodeFUJITSU
MICROCHIP
Ihre Such: 23N50E, Menge der betroffenen Produkte: 21
Description: N-Channel Enhancement Mode Field Effect Transistor Features: - Low On-Resistance - Low Gate Threshold Voltage - Fast Switching Speed - High Avalanche Energy - Low Input Capacitance - High
Lagerbestand:10000
Mindestbestellmenge:2
Favorit
The 23N50E is a N-channel enhancement-mode power MOSFET manufactured by Fuji Electric. It is designed for use in applications such as switching regulators, switching converters, motor drivers, relay d
Lagerbestand:10000
Mindestbestellmenge:2
Favorit
Lagerbestand:72
Mindestbestellmenge:2
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Lagerbestand:3232
Mindestbestellmenge:5
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Lagerbestand:10000
Mindestbestellmenge:5
Favorit
Description: This is a N-channel MOSFET transistor manufactured by Fuji Electric. It has a maximum drain-source voltage of 500V and a maximum drain current of 23A. Feature: Low on-resistance Low gat
Lagerbestand:10000
Mindestbestellmenge:2
Favorit
Lagerbestand:237
Mindestbestellmenge:5
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Lagerbestand:11970
Mindestbestellmenge:5
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Lagerbestand:990
Mindestbestellmenge:2
Favorit
Lagerbestand:10000
Mindestbestellmenge:2
Favorit
Description: The FMH23N50E is a N-channel enhancement mode power MOSFET with a maximum drain source voltage of 500V and a maximum drain current of 23A. It is designed for use in high-voltage switching
Lagerbestand:10000
Mindestbestellmenge:2
Favorit
Package: TO-3P Manufacturer: FUJI Description: The FMH23N50ESCQ-P is a high voltage N-channel MOSFET with a drain-source voltage of 500V, a drain current of 23A, and a gate-source voltage of ±20V. F
Lagerbestand:10000
Mindestbestellmenge:2
Favorit
Lagerbestand:10000
Mindestbestellmenge:1
Favorit
Description: FMH23N50E is a N-channel MOSFET transistor manufactured by Fuji Electric. It has a maximum drain-source voltage of 500V and a maximum drain current of 23A. Features: Low on-resistanc
Lagerbestand:10000
Mindestbestellmenge:2
Favorit
Lagerbestand:42
Mindestbestellmenge:2
Favorit
Lagerbestand:6289
Mindestbestellmenge:30
Favorit
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