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Utsource
PLCC-32
Microchip Technology
Description: The AT27C512R-70JU is a 512Kbit (64K x 8) CMOS Electrically Erasable Programmable Read-Only Memory (EEPROM) manufactured by Microchip. It is a low-voltage, high-performance device that op
IC EPROM 512K PARALLEL 32PLCC
PLCC32
STMicroelectronics
0813+
Description: The M50FW040K5G is a 4Mbit (512K x 8-bit) Flash memory device from STMicroelectronics. Features: - Fast access time: 55ns - Low power consumption - High reliability - Low voltage operati
IC FLASH 4M PARALLEL 32PLCC
TSOP
Winbond
10+
Description: W9864G6IH-6 is a 64Mb (8M x 8) TSOP Flash Memory manufactured by Winbond. Features: 64Mb (8M x 8) TSOP package 3.3V power supply Access time: 70ns Program/Erase cycles: 10,000 End
IC DRAM 64M PARALLEL 54TSOP
TSOP
Micron Technology
1322+
Description: The MT46V64M8P-5B:F is a 64Mb (8M x 8) Synchronous DRAM (SDRAM) organized as 4 banks of 4M x 16 bits. It is fabricated using Micron's high-performance CMOS technology. Features: High-sp
IC DRAM 512M PARALLEL 66TSOP
SOP16
Cypress
18+
Description: The S25FL512SAGMFI010 is a 512Mb (64Mb x 8) 3V Flash Memory manufactured by Cypress Semiconductor. Features: - Operating voltage range: 2.7V to 3.6V - Fast read access time: 25ns - Progr
IC FLASH 512M SPI 133MHZ 16SOIC
FBGA
Micron Technology
16+
Description: The MT41K256M16TW-107:P is a 256Mb (32M x 8/16M x 16) DDR3L SDRAM, organized as 4 banks of 8M x 8/16M x 16 bits. Features: - Operating temperature range: 0°C to 85°C - VDD power supply:
IC DRAM 4G PARALLEL 96FBGA
WSON8
Macronix International
Parameter Description Value Device Type Serial Flash Memory - Memory Density Total Memory 256 Mbit (32 MB) Data Bus Width Data Bus Width x1/x2/x4/x8 Package Type Package WSON-8 (6x5mm)
BGA
Micron Technology
13+
Parameter Description Value Part Number Full part number MTFC16GJGEF-AIT Z Memory Type Type of memory NAND Flash Density Memory density 16 Gb (2 GB) Package Package type BGA Ball Pitch
IC FLASH 128G MMC 169TFBGA
CDIP
STMicroelectronics
09+
M27C2001-15F1 is a 2Mbit (256K x 8) CMOS UV EPROM and OTP EPROM. It is housed in a standard 300 mil wide, plastic dual-in-line package. Description: The M27C2001-15F1 is a 2Mbit (256K x 8) CMOS UV EP
IC EPROM 2M PARALLEL 32CDIP
TSOP
Mxic
1251+
Parameter Symbol Min Typ Max Unit Description Supply Voltage Vcc 2.7 - 3.6 V Operating voltage range Standby Current Icc - 5 - μA Current consumption in standby mode Active Current Icc - 10
IC FLASH 128M PARALLEL 56TSOP
DIP
Atmel
01+
Description: The AT27C512R-12PC is an electrically erasable programmable read-only memory (EEPROM) chip manufactured by Atmel Corporation. It is a 512K x 8 bit device with a 12-pin dual in-line packag
IC EPROM 512K PARALLEL 28DIP
SOT23-5
Microchip Technology
17+PB
Parameter Description Value Unit Memory Organization Total memory organized in bytes 512 Bytes Operating Voltage (VCC) Supply voltage range 1.8 to 5.5 Volts Interface Communication interfac
SOP-8
SST
06+
Description: This is a 16Mbit (2M x 8) Serial Flash Memory with 4Kbyte Uniform Sector. Features: - Low voltage operation: 2.7V to 3.6V - Fast read access time: 50MHz - Low power consumption: Active c
IC FLASH 16M SPI 50MHZ 8SOIC
SOP44
STM
10+
Parameter Description Value Device Type Flash Memory Manufacturer STMicroelectronics Part Number M29F800DB70M1 Memory Size 8 Mbit (1 M x 8) Voltage - Supply (Vcc) 2.7 V to 3.6 V (Ty
IC FLASH 8M PARALLEL 44SO
SOP16 7.2
Mxic
11+
Description: MX25L25635EMI-12G is a 256Mb (32M x 8) Serial Flash memory, with advanced write protection mechanisms. It is organized as 32,768 words of 8 bits each. Features: - Fast Read access time:
IC FLASH 256M SPI 80MHZ 16SOP
SOP
Mxic
1322+
Description: The MX25L2006EM1I-12G is a 2Mb Serial Flash Memory manufactured by Macronix. It is a 3V single supply flash memory with a serial peripheral interface (SPI). Features: 2Mb (256K x 8) Ser
IC FLASH 2M SPI 86MHZ 8SOP
SOP8
On Semiconductor
00+
Parameter Description Min Typ Max Unit VCC Supply Voltage 2.7 - 5.5 V VPP Programming Voltage 12.0 - 13.0 V fCLK Clock Frequency 1.0 - 10.0 MHz tCYC Cycle Time - 100 - ns ICC Active Cur
IC EEPROM 4K SPI 1MHZ 8SO
BGA153
Sk Hynix
19+
Parameter Symbol Min Typ Max Unit Description Operating Voltage VCC 1.7 - 3.6 V Supply voltage range Standby Current ISB - 1 2 μA Current consumption in standby mode Active Current IOP 5 -
TSSOP
STMicroelectronics
1609+
M95320-WDW6TP is a Serial EEPROM chip manufactured by STMicroelectronics. It is a 16-pin TSSOP (Thin Small Outline Package) package. Description: The M95320-WDW6TP is a Serial EEPROM memory device th
IC EEPROM 32K SPI 20MHZ 8TSSOP
BGA
Toshiba
Parameter Description Value Part Number Unique identifier for the component THGBMJG6C1LBAIL Type Type of device NAND Flash Memory Capacity Storage capacity 64Gb (8GB) Voltage - Supply Ope
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