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MODULE
Semikron
Parameter Description Value/Range Part Number The specific identifier for the component SKKT132/14E Type Type of device MOSFET Package Housing type for the component TO-220 VDS (Max Drain
TO-3PL
15+
Parameter Symbol Min Typ Max Unit Collector-Emitter Voltage VCEO - 400 - V Collector-Base Voltage VCBO - 500 - V Emitter-Base Voltage VEBO - 6 - V Collector Current (Continuous) IC - 15 -
TO-3PL
15+
2SA1302 and 2SC3281 are PNP and NPN silicon epitaxial transistors, respectively, in a TO-3PL package. Description: 2SA1302: This is a PNP silicon epitaxial transistor designed for use in power ampli
N/A
Semikron
Parameter Description Value Unit Device Type Power MOSFET - - Package TO-220AB - - Maximum Drain Current (Id) Continuous Drain Current @ TC = 25°C 12 A Peak Pulse Drain Current (Idm) Non-
TO-3PL
15+
Parameter Symbol Min Typ Max Unit Collector-Emitter Voltage VCE - - 80 V Collector-Base Voltage VCB - - 80 V Emitter-Base Voltage VEB -5 - 5 V Collector Current IC - 15 15 A Base Curren
MODULE
Parameter Symbol Min Typ Max Unit Notes Supply Voltage Vcc 4.5 5 5.5 V Operating Temperature Topr -40 85 °C Storage Temperature Tstg -65 150 °C Output Current Iout 100 150 mA Qui
TO-92
CJ
10+
Parameter Symbol Min Typ Max Unit Description Supply Voltage Vcc 2.7 - 5.5 V Operating supply voltage Output Current Iout - 1.2 1.5 A Maximum continuous output current Efficiency η 80 90 95
TO-3P
Hsdq
22+
Parameter Symbol Min Typical Max Unit Rated RMS On-State Current IT(RMS) - 16 - A Peak On-State Current ITSM - 50 - A (10 ms) On-State Voltage Drop VTM 1.2 - 1.8 V Holding Current IH 5 -
TO-220
Hsdq
22+
Parameter Symbol Min Typ Max Unit Conditions Forward Voltage V_F - 1.2 1.7 V I_T = 1 A Holding Current I_H 5 - 20 mA Latching Current I_L 5 - 50 mA Maximum Repetitive Peak Off-State Vol
TO-92
Cj/长电
Description: The PCR406 is a PNP transistor manufactured by CJ. Features: - Low collector-emitter saturation voltage - High current gain - Low noise Applications: - Audio amplifiers - Motor control
A1 TO-92
TO-3PL
15+
Parameter 2SC3281 (NPN) 2SA1302 (PNP) Type NPN Transistor PNP Transistor Collector-Emitter Voltage (Vceo) 80 V 80 V Emitter-Base Voltage (Vebo) 5 V 5 V Collector-Base Voltage (Vcbo) 80 V
MODULE
Semikron
Parameter Symbol Conditions Min Typ Max Unit Forward Voltage VF IF = 15A - 0.8 1.2 V Reverse Voltage VR - - 800 V Forward Current IF Tc = 25°C - 15 - A Peak Surge Current IFSM t = 10ms,
TO-220
Parameter Symbol Conditions Min Typ Max Unit Repetitive Peak Off-State Voltage V DRM T J = 25°C - 600 - V Repetitive Peak Reverse Voltage V RRM T J = 25°C - 600 - V Non-Repetitive Peak Off-
Parameter Value Unit Type SKKT56/14E Collector-Emitter Voltage (VCEO) 800 V Collector-Base Voltage (VCBO) 800 V Emitter-Base Voltage (VEBO) 6 V Continuous Collector Current (IC) 14 A
TO-3P
To-3pl
15+
Parameter Symbol 2SA1302-O / 2SA1302 Collector-Emitter Voltage (VCEO) VCEO 80 V Emitter-Collector Voltage (VECO) VECO 80 V Base-Emitter Voltage (VBE) VBE 7 V Collector Current (IC) IC 15
MODULE
Semikron
11
SKKH132/22EH4 is a three-phase diode module manufactured by Semikron. It has a voltage rating of 1200V and a current rating of 132A. It is designed for use in motor drives, welding machines, and other
MODULE
Semikron
Parameter Symbol Conditions Min Typ Max Unit Supply Voltage Vcc Operating 4.5 5.5 V Output Current Iout Continuous 1.2 A Peak Output Current Ipeak Pulse 1.8 A Quiescent Current Iq Vc
TO-220F
Hsdq
20+
Parameter Symbol Min Typical Max Unit Condition Rated ON-state current IT(RMS) - 8 - A Tc=40°C Peak ON-state current ITSM - 80 - A Pulse width ≤ 1ms, duty ≤ 2% ON-state voltage drop VT 0.9
专营模块
Semikron
08+
Parameter Symbol Conditions Min Typ Max Unit Forward Voltage VF IF = 20mA 1.8 2.2 V Reverse Current IR VR = 5V 100 nA Peak Forward Current IF(surge) tp = 1s 30 mA Operating Temperatu
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