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MODULE
SKKT500/14E is a Thyristor Module manufactured by Semikron. It is a three-phase thyristor module with a nominal current of 500A and a voltage rating of 1400V. It is designed to be used in applications
MODULE
Parameter Description Value Part Number Unique identifier for the component MCC55-12IO1 Package Type Type of package DIP-16 Operating Voltage Voltage range for operation 4.5V to 5.5V Inpu
MODULE
BBC
MCC25-12IO8 is a BBC module manufactured by MCC. It is a 12-channel digital input/output module with 8-channel relay output. Description: The MCC25-12IO8 module is a 12-channel digital input/output m
MODULE
Semikro
SKKT42/18E is a module from Semikron, a German manufacturer of power electronics. It is a three-phase thyristor module with a voltage rating of 600 V and a current rating of 42 A. The module is design
MODULE
IXYS
04+
MCD310-22io1 is an IGBT module manufactured by IXYS. It is a high power, high frequency, and high voltage module. It is designed for use in high power switching applications such as motor control, pow
MODULE
Eupec
The TT46N16LOF is a module manufactured by EUPEC. It is a three-phase bridge rectifier module with a voltage rating of 1600V and a current rating of 46A. It is designed for use in applications such as
MODULE
BBC
Parameter Description Value Unit Product Name MCC90-12I08 Microcontroller Input Voltage Operating voltage range for the microcontroller 2.7 to 5.5 V I/O Pins Number of Input/Output pins 1
TO-3PL
15+
Parameter 2SC3281 (NPN) 2SA1302 (PNP) Type NPN Transistor PNP Transistor Collector-Emitter Voltage (Vceo) 80 V 80 V Emitter-Base Voltage (Vebo) 5 V 5 V Collector-Base Voltage (Vcbo) 80 V
MODULE
IXYS
04+
Parameter Description Value Part Number Full part identification MCD161-22IO1 Type Device type Diode Function Main function Schottky Rectifier Maximum Reverse Voltage (Vr) Max voltage in
TO-3P
KEC
17+
KTD998-O: Description: KTD998-O is a NPN silicon transistor manufactured by KEC. It is designed for use in general purpose amplifier and switching applications. Features: Low collector-emitter sat
Below is the parameter table and instructions for the SKKH162-16E: Parameter Table Parameter Symbol Min Typical Max Unit Forward Voltage Vf 1.8 2.0 2.2 V Reverse Breakdown Voltage Vr - 5.0 -
Infineon Technologies AG
Description: The TT170N18KOF is a 1700V, 18A N-channel IGBT module from Infineon Technologies AG. Features: Low conduction and switching losses High short circuit capability Low thermal resistance
Silicon Controlled Rectifier, 350A I(T)RMS, 170000mA I(T), 1800V V(DRM), 1800V V(RRM), 2 Element, MODULE-7
MODULE
05+
TD92N12KOF is an insulated gate bipolar transistor (IGBT) module manufactured by Toshiba. It is a 1200V/92A device with a low on-state voltage drop, low gate charge, and low switching loss. It is suit
MODULE
Semikon
Parameter Description Value Unit Part Number Device Identifier SKKT42/16 - Type Component Type Thyristor - IFSM Surge RMS On-State Current 50 A IT(RMS) RMS On-State Current 16 A VTM Rep
MODULE
Semikron
06+
SKKE15/16 is a module from the SEMIKRON SKKE series of insulated gate bipolar transistors (IGBTs). It is a three-phase module with a voltage rating of 1200V and a current rating of 15A/16A. It is desi
MODULE
Semikro
Parameter Description Value Unit Part Number Component identifier SKKT92B16 - Type Device type IGBT Module - Voltage Rating (Vce) Maximum collector-emitter voltage 1200 V Current Rating (
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