≥1:
US $2.78200
UTSOURCE()サイトは、ここをクリック
Dear customers, due to the implementation of the GDPR policy in Europe, UTSOURCE has also made adjustment accordingly to meet the policy requirements. Please read the new privacy policy carefully and this window will no longer pop up after you accept it.
Delivery Address
+ アドレスの追加
新運送先
*追跡情報を時間内に受信できるように、携帯電話番号を正しく入力してください。
国コードSOP-8
International Rectifier
13+
Description: The IRS21091STRPBF is a high-voltage, high-speed, 3-phase gate driver IC with integrated MOSFETs and Schottky diodes. Features: - High voltage operation up to 600V - High speed switching
TO-220
National Semiconductor
16+
Parameter Description Value Part Number Model LM2575T-5.0 Package Type Package TO-220 Country of Origin Manufacturer Location China (Original) Output Voltage Fixed Output Voltage 5.0V I
TO-220
National Semiconductor
16+
Description: The LM2575T-ADJ is a monolithic integrated circuit in a TO-220 package. It is a step-down switching regulator with adjustable output voltage. It is capable of driving a 3A load with exce
TO-220
National Semiconductor
17+
Parameter Symbol Min Typical Max Unit Input Voltage VIN 7 - 40 V Output Voltage VOUT - 12 - V Output Current IOUT - 3 - A Switching Frequency fSW - 52 - kHz Quiescent Current IQ - 5 - m
TO-264
Fairchild/on
18+
Parameter Symbol Min Typ Max Unit Description Supply Voltage VDD 1.7 - 3.6 V Operating supply voltage range Input Voltage (High) VIH 0.7 - VDD V Minimum input high voltage Input Voltage (Lo
TO-220
Vishay Siliconix
06+
Parameter Symbol Min Typical Max Unit Notes Drain-Source Voltage VDS - - 150 V Gate-Source Voltage VGS -15 - 20 V Continuous Drain Current ID - - 85 A @ TC = 25°C Pulse Drain Current ID
TO-264
Fairchild/on
18+
Description: IGBT, N-Channel, 1200V, 11A, TO-264 Features: Low Conduction Losses Low Gate Charge Low Gate Input Resistance High Speed Switching Low Thermal Resistance Applications: Motor Contr
TO-247
Wisdom
11+
Parameter Symbol Min Typical Max Unit Conditions Drain-Source Voltage V_DS -50 50 V Gate-Source Voltage V_GS -20 20 V Continuous Drain Current I_D 20 A T_C = 25°C Pulse Drain Curren
SOT-223
AMS AG
17+
Parameter Symbol Min Typ Max Unit Input Voltage VI 1.0 - 15 V Output Voltage VO - 3.3 - V Output Current IO - 800 - mA Dropout Voltage VD - 1.3 - V Quiescent Current IQ - 5 - mA Load
TO-247
Vishay Siliconix
12+
Parameter Description Value Part Number 60APU06 Type Power MOSFET Package TO-220 VDS Drain-Source Voltage 60 V VGS Gate-Source Voltage ±20 V ID Continuous Drain Current 18 A PTOT
TO-220
Vishay Siliconix
18+
Parameter Symbol Min Typ Max Unit Description Input Voltage VIN 2.7 - 5.5 V Operating input voltage range Output Voltage VOUT - 3.3 - V Regulated output voltage Output Current IOUT - 600 -
14pin
Sanyo
05+
Description: LA6324NML-TE-L is a 14-pin SANYO integrated circuit (IC) designed for use in audio applications. Features: * Low power consumption * High-quality audio output * Low distortion * Low nois
Integrated Circuit(IC) LA6324NML-TE-L 14PIN Marking LA6324N
TO-220
STMicroelectronics
11+
Parameter Symbol Min Typ Max Unit Drain-Source Voltage VDS - - 600 V Gate-Source Voltage VGS -15 - 15 V Continuous Drain Current ID - 22 - A Pulse Drain Current IDpeak - 88 - A Total Po
TO-220
National Semiconductor
16+
Parameter Symbol Min Typ Max Unit Input Voltage VIN 7 - 40 V Output Voltage VOUT - 12 - V Output Current IOUT - 3 5 A Switching Frequency fSW - 52 - kHz Quiescent Current IQ - 5 - mA
TO-3P
Fuji Electric
15+
Parameter Symbol Min Typ Max Unit Conditions/Notes Drain-Source Voltage VDS - 900 - V Continuous Drain-Source Voltage, VGS = 0V Gate-Source Voltage VGS -20 0 20 V Absolute Maximum Rating Co
TO-220
International Rectifier
16+
Parameter Symbol Test Conditions Min Typ Max Unit Continuous Drain Current ID Tc = 25°C - 16 - A Pulse Drain Current IDM Tc = 25°C, t = 10 μs - 80 - A Gate-Source Voltage VGS -10 - 10 V
TO-247
Vishay Siliconix
18+
Description: The IRFPG50 is a N-channel enhancement-mode vertical DMOS power field-effect transistor. Features: Low gate charge Low on-state resistance Fast switching 100% avalanche tested Fully
TO-252
International Rectifier
18+
Parameter Value Unit Type N-Channel MOSFET - Maximum Drain-Source Voltage (VDS) 120 V Maximum Gate-Source Voltage (VGS) ±20 V Maximum Drain Current (ID) 6.5 A Maximum Power Dissipation
TO-220
National Semiconductor
16+
Parameter Description Value Package Type Package Style TO-220 Input Voltage Range Minimum Input Voltage 4.5V - 40V Output Voltage Range Adjustable Output Voltage 1.23V to 37V Output Curre
MAGNACHIP
To-220f
16+
Parameter Symbol Min Typ Max Unit Description Drain-Source Voltage VDS - - 500 V Maximum drain-to-source voltage Gate-Source Voltage VGS -20 - 20 V Maximum gate-to-source voltage Continuous
生産の専門家を停止し、生産を停止し、見つけるのが難しい多数の電子部品を提供し、メンテナンス会社を促進することができます