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TSSOP28
National Semiconductor
0409+
Parameter Symbol Min Typ Max Unit Notes Input Voltage VIN 3.0 - 5.5 V Output Voltage VOUT 1.2 - 5.0 V Adjustable Output Current IOUT - 1.0 1.5 A Continuous Efficiency (Typical) η - 85 -
SOP8
Fairchild
07+
Description: The FDS5670 is a N-channel logic level enhancement mode power field effect transistor (FET). Features: - Low gate charge - Low on-state resistance - Fast switching - Ease of paralleling
DIP8
STMicroelectronics
0748+
The UC3842B is a fixed frequency current mode PWM controller manufactured by STMicroelectronics. It is a 8-pin DIP package and is designed for off-line and DC-to-DC converter applications. Descriptio
SOP16
NXP Semiconductors
1103+
Description: The 74HC175D+652 is a high-speed Si-gate CMOS logic quad D-type flip-flop with reset. Features: High-speed Si-gate CMOS technology Low power consumption High noise immunity High outp
DO-41
On Semiconductor
07+
1N5352BRLG is a 5.6V, 1.0W Zener Diode manufactured by ON Semiconductor. It is a surface mount, axial leaded device with a DO-41 package. Description: The 1N5352BRLG is a 5.6V, 1.0W Zener Diode with
SOT23-6
NXP Semiconductors
1124+
Description: The 74LVC1G175GV is a single gate logic level translator in SOT23-6 package from NXP. Features: Low power consumption High noise immunity Low input and output leakage High speed ope
SOP14
Atmel
16+
Description: The ATtiny44A is a low-power CMOS 8-bit microcontroller based on the AVR enhanced RISC architecture. By executing powerful instructions in a single clock cycle, the ATtiny44A achieves thr
SOP16
On Semiconductor
20+
Parameter Symbol Min Typical Max Unit Description Supply Voltage VDD 1.65 - 3.6 V Operating supply voltage range Output Current IO - 50 100 mA Maximum output current per channel Input Volta
SOP16
ADI
0723+
Description: Isolated Digital Isolator, 4-Channel, 2.5 kV, SOP16 Features: -High-speed data rate: 1 Mbps -High-voltage isolation: 2.5 kV -Low propagation delay: 1.5 μs -Low power consumption: 1.2 mW -
SOT23-6
Texas Instruments
07+
Parameter Symbol Min Typ Max Unit Notes Supply Voltage VCC 2.7 - 5.5 V Quiescent Current IQ - 100 - μA Per amplifier Input Offset Voltage VIO - 50 - μV Input Bias Current IB - 0.5 - pA
TSOP
STMicroelectronics
0843+
Description: M29W640GB70NA6E is a 64Mb (8M x 8) Flash memory device manufactured by STMicroelectronics. It is housed in a 48-pin TSOP (Thin Small Outline Package) and is organized as 8,388,608 bits.
TSOP
Esmt
0545+
Description: 16Mb (1M x 16) CMOS 3.0V Page Mode Flash Memory Features: - Fast access time: 70ns (max.) - Low power consumption - Single power supply: 2.7V to 3.6V - CMOS technology - Page mode operat
QFN24
Microchip Technology
17+
Parameter Description Value Device Type Ethernet Transceiver 10/100 Mbps Package QFN (Quad Flat No-Leads) 24-pin, 5x5 mm Operating Voltage VDD 3.3V ± 5% Operating Temperature Range Topera
TQFP64
Atmel
16+
Parameter Description Value/Range Device Microcontroller ATMEGA128L-8AU Package Package Type TQFP (44-pin) Operating Voltage (Vcc) Supply Voltage Range 2.7 V to 5.5 V Clock Frequency Maxi
SOP8
NXP Semiconductors
0819+
Description: The PCA82C251T/N3+118 is a single-channel CAN transceiver with an integrated voltage regulator and an integrated oscillator. Features: - High-speed CAN transceiver - Integrated voltage r
QFN32
Atmel
16+
Parameter Description Value Device Microcontroller ATSAMD20E17A-MU Package QFN (Quad Flat No-Lead) 48-pin Operating Voltage VDD Core Supply 1.62V to 3.63V Operating Temperature Industrial
PLCC-32
Mxic
0635+
Parameter Symbol Conditions Min Typical Max Unit Supply Voltage Vcc Operating 2.7 - 3.6 V Standby Current Icc Vcc = 3.0V 1 - 5 μA Active Current Icc Vcc = 3.0V 10 - 30 mA Access Time tacc
4M-BIT [512KX8] CMOS EQUAL SECTOR FLASH MEMORY
TQFP64
Atmel
16+
Parameter Description Value/Range Package Type Type of package TQFP-44 (0.8mm pitch) Operating Voltage (Vcc) Supply voltage range 4.5V to 5.5V Clock Frequency Maximum clock frequency 16 MHz
SMA
On Semiconductor
0537+
1SMA5917BT3G is a surface mount Zener diode manufactured by ON Semiconductor. It has a maximum power dissipation of 500 mW and a maximum operating temperature of 150°C. The diode has a breakdown volta
SOT23-6
FSC
08+
Description: FDC642P is a P-Channel MOSFET with a drain current of -6A and a drain-source voltage of -20V. Features: - Low On-Resistance - Low Input Capacitance - Low Threshold Voltage - High Power D
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