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TSOP
Micron Technology
04+
Description: MT46V16M16P-5B is a 16M x 16 DDR SDRAM manufactured by Micron. Features: - Operating voltage of 2.5V - Data transfer rate of up to 266MHz - 4 banks of 4M x 16 organization - CAS latency
256Mb DDR SDRAM Component
TSOP54
Micron Technology
04+
Description: The MT48LC4M16A2P-7E is a 4M x 16-bit (64Mb) Synchronous DRAM (SDRAM) organized as 4 banks of 4M x 4-bit. It is fabricated using Micron's high-performance CMOS technology. Features: 4M
The MT48LC4M16A2P-7E is a SDR SDRAM with high-speed CMOS and uses an internal pipelined architecture to achieve high-speed operation. This architecture is compatible with the 2n rule of prefetch architectures, but it also allows the column address to be changed on every clock cycle to achieve a high-speed, fully random access. Precharging one bank while accessing one of the other three banks will hide the precharge cycles and provide seamless, high-speed and random-access operation. This is a high-speed CMOS, dynamic random-access memory containing 67108864-bits. It is internally configured as a quad-bank DRAM with a synchronous interface. Read and write accesses to the SDRAM is burst-oriented, accesses start at a selected location and continue for a programmed number of locations in a programmed sequence. Accesses begin with the registration of an active command, which is then followed by a read or write command.
BGA
Micron Technology
04+
Parameter Value Device Type 64 M-Bit (8M x 8) SDRAM Package 54-pin TSOP II Supply Voltage (VCC) 3.3V ± 0.3V Operating Temperature -40°C to +85°C Data Width 8-bit Bank Address Lines 3
256Mb SDRAM Component
TSOP-54
Micron Technology
04+
Description: The MT48LC16M16A2BG-75 is a 16 Meg x 16 (256Mb) Synchronous DRAM (SDRAM) organized as 4 banks of 4M x 16 bits. The device is fabricated using Micron's high-performance CMOS technology. F
256Mb SDRAM Component
TSOP-86
Micron Technology
04+
Description: The MT48LC8M32B2TG-7 is a 32 Megabit (4 M x 8-bit) Synchronous DRAM memory device manufactured by Micron Technology Inc. It is organized as 4M words by 8 bits and is packaged in a TSOP-8
Synchronous DRAM, 8MX32, 6ns, CMOS, PDSO86, 0.400 INCH, TSOP-86
TSSOP54
Micron Technology
0546+
The MT48LC8M16A2P-75ITG is a 16 Meg x 8 bit low power Synchronous Dynamic Random Access Memory (SDRAM) manufactured by Micron. It is packaged in a 54-pin TSSOP package. Features: -3.3V power suppl
256Mb SDRAM Component
TSOP-86
Micron Technology
04+
Description: The MT48LC8M32B2P-7 is a 32 Megabit (4 M x 8-bit) Synchronous DRAM (SDRAM) organized as 524,288 words by 8 bits. Features: - Fast access time: 7ns - Single 3.3V power supply - Fully sync
256Mb SDRAM - OBSOLETE
TSOP-66
MT
06+
Parameter Symbol Test Conditions Min Typ Max Unit Supply Voltage VCC 2.5 3.6 V Standby Current ISB VCC = 3.0V 5 μA Active Current IAV VCC = 3.0V 200 mA Access Time tAA VCC = 3.0V 6
256Mb DDR SDRAM Component
TSSOP-54
Micron Technology
n/a
Description: 4M x 16 DRAM, 4 Banks, 4K Refresh, 3.3V, 54-Pin TSSOP Features: 4M x 16 bits organization 4 Banks 4K Refresh Fast Page Mode 3.3V ± 0.3V Power Supply Programmable Burst Lengths (1, 2
(MT48LCxxMxxAx) SYNCHRONOUS DRAM
TSOP66
Micron Technology
04+
Description: MT46V16M16TG-6IT is a 16M x 16 DDR SDRAM manufactured by Micron. Features: - 16M x 16 DDR SDRAM - 3.3V power supply - TSOP66 package - Clock frequency of 166MHz - CAS Latency of 3 - Burs
256Mb DDR SDRAM Component
TSOP-54
Micron Technology
04+
Description: The MT48LC16M4A2P-75 is a 16Mbit (2M x 8) Synchronous DRAM module from Micron. It is a 54-pin TSOP package and is a low-power, high-speed CMOS synchronous DRAM. Features: 2M x 8 organiz
64Mb SDRAM Component
TSOP54
Micron Technology
n/a
Parameter Description Value Device MT48LC8M16A2P-75G Type SDRAM (Synchronous Dynamic Random Access Memory) Organization 8M x 16 bits Density 128 Mbit Supply Voltage (Vcc) Operating
(MT48LCxxMxxAx) SYNCHRONOUS DRAM
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