≥1:
US $11.74400
Utsource 사이트에 들어가려면 여기를 클릭하세요
Dear customers, due to the implementation of the GDPR policy in Europe, UTSOURCE has also made adjustment accordingly to meet the policy requirements. Please read the new privacy policy carefully and this window will no longer pop up after you accept it.
Delivery Address
+ 주소추가
새로운화물운송주소
* 추적 정보를 제때받을 수 있도록 휴대폰 번호를 정확하게 입력하십시오.
국가 코드TO-272
Freescale
06+
RF Power Field Effect TransistorN - Channel Enhancement - Mode Lateral MOSFET 945 MHz, 30 W, 26 V ni-360
H2S
Mitsubishi
2017+
Silicon RF Devices RF High Power MOS FET Modules RA55H3340M Remarks RoHS : Restriction of the use of certain Hazardous Substances in Electrical and Electronic Equipment
H46S
Mitsubishi
2015+
Silicon RF Devices RF High Power MOS FET Modules RA07H4452M Remarks RoHS : Restriction of the use of certain Hazardous Substances in Electrical and Electronic Equipment
H2S
Mitsubishi
2017+
Silicon RF Devices RF High Power MOS FET Modules RA30H4452M Remarks RoHS : Restriction of the use of certain Hazardous Substances in Electrical and Electronic Equipment
H2M
Mitsubishi
2018+
Silicon RF Devices RF High Power MOS FET Modules RA30H3340M Remarks RoHS : Restriction of the use of certain Hazardous Substances in Electrical and Electronic Equipment
H2M
Mitsubishi
2017+
Silicon RF Devices RF High Power MOS FET Modules RA60H3847M1 Remarks RoHS : Restriction of the use of certain Hazardous Substances in Electrical and Electronic Equipment
H2S
Mitsubishi
2017+
Parameter RA60H1317M RA60H1317M-101 Type Resistor Array Resistor Array Configuration 4 Resistors 4 Resistors Resistance 10.0 kΩ 10.0 kΩ Tolerance ±1% ±1% Power Rating (W) 0.25 W 0.25 W
H2M
Mitsubishi
2018+
Silicon RF Devices RF High Power MOS FET Modules RA30H2127M1 Remarks RoHS : Restriction of the use of certain Hazardous Substances in Electrical and Electronic Equipment
SMD
Philips
00+
Triple video driver hybrid amplifie
생산 전문가 중지, 우리는 유지 보수 회사를 용이하게하기 위해 생산이 중단되고 찾기 어려운 많은 전자 부품을 제공 할 수 있습니다