≥1:
Mex $68.67842
Comprar(0)
Pide Su Cotización(0)
Dear customers, due to the implementation of the GDPR policy in Europe, UTSOURCE has also made adjustment accordingly to meet the policy requirements. Please read the new privacy policy carefully and this window will no longer pop up after you accept it.
Delivery Address
+ Añadir dirección
Nueva dirección de transporte
* Por favor, complete el número de teléfono celular correctamente para asegurarse de que puede recibir la información de seguimiento a tiempo.
Código de paísFiltro de resultados de busqueda:
TO-220
Mitsubishi
2018
Silicon RF Devices RF High Power MOS FETs (Discrete) RD06HVF1 Remarks RoHS : Restriction of the use of certain Hazardous Substances in Electrical and Electronic Equipment
Depósito:2829
Mínimo:1
Favorita
Ceramic(Large)
Mitsubishi
2018+
Silicon RF Devices RF High Power MOS FETs (Discrete) RD70HVF1 Remarks RoHS : Restriction of the use of certain Hazardous Substances in Electrical and Electronic Equipment
Depósito:39230
Mínimo:1
Favorita
SOT-89
Mitsubishi
2018+
Silicon RF Devices RF High Power MOS FETs (Discrete) RD70HVF1 Remarks RoHS : Restriction of the use of certain Hazardous Substances in Electrical and Electronic Equipment
Depósito:66435
Mínimo:4
Favorita
HPM
Mitsubishi
2018+
Silicon RF Devices RF High Power MOS FETs (Discrete) RD70HUF2 Remarks RoHS : Restriction of the use of certain Hazardous Substances in Electrical and Electronic Equipment
Depósito:567
Mínimo:1
Favorita
Depósito:79200
Mínimo:12
Favorita
CERAMIC
Mitsubishi
2018+
Silicon RF Devices RF High Power MOS FETs (Discrete) RD70HVF1 Remarks RoHS : Restriction of the use of certain Hazardous Substances in Electrical and Electronic Equipment
Depósito:33951
Mínimo:1
Favorita
CERAMIC
Mitsubishi
2017
Silicon RF Devices RF High Power MOS FETs (Discrete) RD70HVF1 Remarks RoHS : Restriction of the use of certain Hazardous Substances in Electrical and Electronic Equipment
Depósito:40091
Mínimo:1
Favorita
Depósito:33951
Mínimo:1
Favorita
SOT-89
Mitsubishi
2018+
Silicon RF Devices RF High Power MOS FETs (Discrete) RD01MUS2 Remarks RoHS : Restriction of the use of certain Hazardous Substances in Electrical and Electronic Equipment
Depósito:28494
Mínimo:4
Favorita
HPM
Mitsubishi
2018+
Silicon RF Devices RF High Power MOS FETs (Discrete) RD70HVF1 Remarks RoHS : Restriction of the use of certain Hazardous Substances in Electrical and Electronic Equipment
Depósito:38780
Mínimo:1
Favorita
SOT-23
Cj/长电
Silicon RF Devices RF High Power MOS FETs (Discrete) RD70HVF1 Remarks RoHS : Restriction of the use of certain Hazardous Substances in Electrical and Electronic Equipment
Depósito:37950
Mínimo:1
Favorita
HPM
Mitsubishi
2018+
Silicon RF Devices RF High Power MOS FETs (Discrete) RD35HUP2 Remarks RoHS : Restriction of the use of certain Hazardous Substances in Electrical and Electronic Equipment
Depósito:849
Mínimo:1
Favorita
TO-220
Mitsubishi
2018+
Silicon RF Devices RF High Power MOS FETs (Discrete) RD16HHF1 Remarks RoHS : Restriction of the use of certain Hazardous Substances in Electrical and Electronic Equipment
Depósito:33951
Mínimo:1
Favorita
Depósito:33936
Mínimo:2
Favorita
Depósito:33951
Mínimo:1
Favorita
TO-220
Mitsubishi
2018
Silicon RF Devices RF High Power MOS FETs (Discrete) RD70HVF1 Remarks RoHS : Restriction of the use of certain Hazardous Substances in Electrical and Electronic Equipment
Depósito:40720
Mínimo:1
Favorita
TO-220
Mitsubishi
2018+
Silicon RF Devices RF High Power MOS FETs (Discrete) RD16HHF1 Remarks RoHS : Restriction of the use of certain Hazardous Substances in Electrical and Electronic Equipment
Depósito:33951
Mínimo:1
Favorita
Depósito:33914
Mínimo:1
Favorita
Depósito:33951
Mínimo:1
Favorita
Depósito:33840
Mínimo:1
Favorita
Detener a los expertos en producción, podemos proporcionar una gran cantidad de componentes electrónicos que se han detenido y que son difíciles de encontrar para facilitar la empresa de mantenimiento.