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国家代码PDFN
Micron Technology
Description: The MT25QL256ABA1EW9-0SIT is a 256-megabit (32-megabyte) Serial Flash memory device from Micron Technology. Features: - Serial Peripheral Interface (SPI) bus protocol - Quad-SPI (QSPI) b
FLASH - NOR Memory IC 256Mb (32M x 8) SPI 133MHz
66-TSSOP (0.400", 10.16mm Width)
Micron Technology
SDRAM - DDR Memory IC 256Mb (32M x 8) Parallel 200MHz 700ps 66-TSOP
SOP8
Winbond Electronics
Description: The W25Q64DWSSIG is a Serial Flash memory device from Winbond Electronics. It is a 8-pin SOP package with a capacity of 64M-bit (8M-byte). Features: 8-pin SOP package 64M-bit (8M-byte
FLASH - NOR Memory IC 64Mb (8M x 8) SPI 104MHz 8-SOIC
DIP8
Microchip Technology
EEPROM Memory IC 32Kb (4K x 8) SPI 20MHz 8-PDIP
SOP-8
Microchip Technology
EEPROM Memory IC 64Kb (8K x 8) I2C 400kHz 900ns 8-SOIJ
TSSOP48
Atmel
10+
Description: AT49BV1614AT-90TI is a 16Mbit (2M x 8) CMOS Flash Memory. Features: - Low Voltage Operation: 2.7V to 3.6V - Fast Access Time: 90ns - High Reliability: 10,000 Program/Erase Cycles - Low P
IC FLASH 16M PARALLEL 48TSOP
SOP8
Winbond
15+
Description: W25Q16DWSNIG is a 16Mbit Serial Flash memory manufactured by Winbond. It is a non-volatile memory with a serial peripheral interface (SPI) and a dual-SPI. Features: 16Mbit (2M x 8/1M x
IC FLASH 16M SPI 104MHZ 8SOIC
QFN8
Memory America
FLASH - NAND Memory IC 1Gb (128M x 8) SPI - Quad I/O 104MHz 155μs 8-WSON (6x8)
MSOP
STMicroelectronics
1425+
M95320-DRDW3TP/K is a 3-wire Serial EEPROM Memory manufactured by STMicroelectronics. It is a 1Kb (128 x 8) Serial EEPROM memory with an I2C interface. The device is available in an 8-pin MSOP package
IC EEPROM 32K SPI 20MHZ 8TSSOP
8-SOIC (0.154", 3.90mm Width)
Microchip Technology
EEPROM Memory IC 1Kb (128 x 8) SPI 2MHz 8-SOIC
SOP8
AT
09+
Description: AT24C256BN-SH-B is an 8-pin Serial EEPROM from Atmel Corporation. It is a 2-wire Serial EEPROM with a 256Kbit (32Kbyte) capacity. Features: * 2-wire Serial Interface * 256Kbit (32Kbyte)
IC EEPROM 256K I2C 1MHZ 8SOIC
TSSOP48
Memory America
EEPROM - NAND Memory IC 1Gb (128M x 8) Parallel 25ns 48-TSOP I
100-LQFP
Cypress Semiconductor Corp
SRAM - Synchronous Memory IC 4.5Mb (256K x 18) Parallel 133MHz 4ns 100-TQFP (14x20)
54-TFBGA
Issi, Integrated Silicon Solution
SDRAM Memory IC 64Mb (4M x 16) Parallel 143MHz 5.4ns 54-TFBGA (8x8)
TSOP56
STMicroelectronics
10+
Description: The M29W640GB70NB6E is a 64 Mbit (4 Mbyte) Flash memory device manufactured by STMicroelectronics. It is organized as 8,388,608 x 8 bits and is fabricated with STMicroelectronics' high-pe
IC FLASH 64M PARALLEL 56TSOP
8-SOIC (0.209", 5.30mm Width)
Adesto Technologies
FLASH Memory IC 16Mb (512 Bytes x 4096 pages) SPI 85MHz 8-SOIC
BGA
Macronix International
13+PB
Manufacturer: Macronix Description: 4Mb (512K x 8) CMOS 3.0V Boot Sector Flash Memory Features: Single Voltage Read and Program (3.0V) Low Power Consumption Fast Read Access Time 70ns Boot B
IC FLASH 4M PARALLEL 48LFBGA
SOJ42
Integrated Silicon Solution
Parameter Description Value Device Type Type of Memory 16M-Bit CMOS SRAM (2M x 8) Supply Voltage (Vcc) Operating Supply Voltage Range 2.7V to 3.6V Standby Current (Icc) Standby Current at V
DRAM Chip EDO 16Mbit 1Mx16 5V 42-Pin SOJ
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