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国家代码SOT-89
Mitsubishi
2018+
Parameter Description Value Part Number Full part number RD01MUS2-T513 Type Device type MOSFET Technology Type of technology Silicon Package Package type TO-252 (DPAK) Polarity Polarity
TO220
International Rectifier
18+
Parameter Symbol Test Conditions Min Typical Max Unit Drain-Source Voltage VDS -10 55 V Gate-Source Voltage VGS -20 20 V Continuous Drain Current ID TC = 25°C 49 A TC = 75°C 38
CERAMIC
Mitsubishi
2018+
RD70HVF1 is a high-voltage MOSFET transistor manufactured by Mitsubishi. It is a N-channel enhancement mode vertical DMOS FET. It is designed for high voltage switching applications such as DC-DC conv
Silicon RF Devices RF High Power MOS FETs (Discrete) RD70HVF1 Remarks RoHS : Restriction of the use of certain Hazardous Substances in Electrical and Electronic Equipment
CERAMIC
Mitsubishi
2017
Description: RD30HVF1 is a 30A, 600V N-Channel MOSFET manufactured by Mitsubishi. Features: Low On-Resistance High Speed Switching Low Gate Charge RoHS Compliant Applications: DC-DC Converters M
MODULE
Mitsubishi
Description: The UM100CDY-10 is a DC-DC converter module manufactured by Mitsubishi. It is a single-output, isolated, non-regulated module with a wide input voltage range. Features: Wide input volta
HPM
Mitsubishi
2018+
RD35HUP2 is a three-phase AC motor manufactured by Mitsubishi. It is a high-performance motor with a rated output of 3.7 kW and a rated voltage of 200 V. It is designed for use in a wide range of appl
TO-220
Mitsubishi
2018+
Silicon RF Devices RF High Power MOS FETs (Discrete) RD16HHF1 Remarks RoHS : Restriction of the use of certain Hazardous Substances in Electrical and Electronic Equipment
SOT-89
Mitsubishi
2018+
Manufacturer: Mitsubishi Description: RD01MUS2-T513 is a low-power, low-noise, high-gain, dual-channel operational amplifier from Mitsubishi. Features: Low power consumption: 0.8 mW Low noise: 1.5
TO-220
Mitsubishi
2018
Description: RD06HVF1-501 is a N-channel power MOSFET manufactured by Mitsubishi. Features: Drain-Source Voltage: 60V Drain Current: 6A RDS(on): 0.065Ω Gate-Source Voltage: ±20V Operating Temper
TO-220
Mitsubishi
2018+
Parameter RD16HHF1 RD16HHF1-101 Type N-Channel MOSFET N-Channel MOSFET Package TO-220AB TO-220AB Drain-Source Voltage (VDS) 60V 60V Gate-Source Voltage (VGS) ±20V ±20V Continuous Drain
Silicon RF Devices RF High Power MOS FETs (Discrete) RD16HHF1 Remarks RoHS : Restriction of the use of certain Hazardous Substances in Electrical and Electronic Equipment
MODULE
Mitsubishi
The Mitsubishi UM75CDY-10 is a module designed for use in industrial automation systems. It is a compact, high-performance module that provides a wide range of features and functions for controlling a
TO-220
Mitsubishi
2018
Parameter Value Unit Part Number RD06HVF1-501 - Type Diode - Maximum Reverse Voltage (VRRM) 600 V Maximum Average Rectified Forward Current (IF(AV)) 1 A Peak Repetitive Reverse Voltage
HF HIGH POWER
Mitsubishi
2018+
Parameter RD100HHF1 RD100HHF1-101 Type MOSFET MOSFET Package TO-247 TO-247 VDS (Max) (V) 100 100 VGS (Max) (V) ±20 ±20 ID (Continuous) (A) 36 at 25°C, 28 at 75°C 36 at 25°C, 28 at 75°C
Silicon RF Devices RF High Power MOS FETs (Discrete) RD100HHF1 Remarks RoHS : Restriction of the use of certain Hazardous Substances in Electrical and Electronic Equipment
MODULE
Mitsubis
Mitsubishi UM150CDY-10 is a module that is used for controlling the speed of a motor. It is a DC brushless motor speed control module with a rated voltage of 150V and a rated current of 10A. It has a
UM1500 SERIES, 15 to 20 Watt DC-DC Converters
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