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国家代码库存:33951
起订量:1
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H2S
Mitsubishi
2018+
Supply situation Discontinued Drain Voltage Typ 12.5 V Frequency (Min - Max) 68~88 MHz Output Power 30 W Package H2S Input Power Typ 50 mW Drain Efficiency (Min) 40 % Feature - RoHS Directive Compliant with RoHS (2011/65/EU、(EU) 2015/863)
库存:868
起订量:1
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H2S
Mitsubishi
2017+
Silicon RF Devices RF High Power MOS FET Modules RA30H4452M Remarks RoHS : Restriction of the use of certain Hazardous Substances in Electrical and Electronic Equipment
库存:33951
起订量:1
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库存:39205
起订量:1
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库存:33951
起订量:1
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TO-270
Mitsubishi
18+
RD15HVF1 is a MOS FET type transistor specifically designed for VHF/UHF High power amplifiers applica -tions
库存:5000
起订量:100
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H2M
Mitsubishi
2017+
Silicon RF Devices RF High Power MOS FET Modules RA60H3847M1 Remarks RoHS : Restriction of the use of certain Hazardous Substances in Electrical and Electronic Equipment
库存:33951
起订量:1
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库存:33946
起订量:2
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库存:33951
起订量:1
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H2M
Mitsubishi
2018+
Silicon RF Devices RF High Power MOS FET Modules RA60H4047M1 Remarks RoHS : Restriction of the use of certain Hazardous Substances in Electrical and Electronic Equipment
库存:1260
起订量:1
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库存:3080
起订量:1
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库存:33951
起订量:1
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库存:33951
起订量:1
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H2M
Mitsubishi
2017+
Silicon RF Devices RF High Power MOS FET Modules RA30H4452M1 Remarks RoHS : Restriction of the use of certain Hazardous Substances in Electrical and Electronic Equipment
库存:33951
起订量:1
添加到收藏夹
库存:33951
起订量:1
添加到收藏夹
库存:33951
起订量:1
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库存:33951
起订量:1
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库存:33951
起订量:1
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H2S
Mitsubishi
2018+
库存:38813
起订量:1
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H2M
Mitsubishi
2018+
Silicon RF Devices RF High Power MOS FET Modules RA80H1415M1 Remarks RoHS : Restriction of the use of certain Hazardous Substances in Electrical and Electronic Equipment
库存:854
起订量:1
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