BSM50GAL120DN2
MODULE
Infineon Technologies AG
2015+
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Home > Elec-component > Modules > IGBT
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Description: The BSM75GAL120DN2 is a 1200V, 75A, IGBT module from Infineon. Features: 1200V blocking voltage Low switching losses Low EMI Short-circuit withstand time Low gate charge
Stock:194
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Description: The BSM75GB170DN2 is a 1700V, 75A, IGBT module from Infineon Technologies. Features: Low switching losses High speed switching Low on-state resistance High surge current capability
Stock:198
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Stock:59
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Stock:200
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Stock:200
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Description: The FD200R12KE3 is an IGBT module made by EUPEC. It is a three-phase, insulated-gate bipolar transistor (IGBT) module with a maximum collector emitter voltage of 1200V. Features: Maxim
Stock:49
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Description: The BSM200GB120DN2 is an IGBT module from Infineon Technologies. It is a 1200V, 200A, NPT IGBT3 module with a maximum junction temperature of 175°C. Features: 1200V blocking voltage 20
Stock:132
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The Infineon BSM150GB120DN2B is a 1200V, 150A IGBT module. It is a three-phase, dual-channel, insulated-gate bipolar transistor (IGBT) module with a low inductance design. It is designed for use in mo
Stock:97
Minimum:1
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Description: The BSM100GB170DLC is an IGBT module from Infineon Technologies. It is a 1700V, 100A, NPT IGBT4 module with Trench/Fieldstop technology. Features: - 1700V blocking voltage - 100A continu
Stock:192
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The BSM100GAL120DLCK is an insulated gate bipolar transistor (IGBT) module manufactured by Infineon Technologies. It is a high-voltage, low-loss, and high-speed power switching device with a maximum c
Stock:199
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Stock:80
Minimum:1
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Stock:80
Minimum:1
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The BSM150GB120DN2 is an IGBT module manufactured by Infineon Technologies. It is a single-phase, half-bridge module with a maximum current rating of 150A. The module is suitable for use in motor driv
Stock:188
Minimum:1
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Stop production experts, we can provide a large number of electronic components that have been stopped production and are difficult to find, to facilitate the maintenance company